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Age Is Important for the Early-Stage Detection of Breast Cancer on Both Transcriptomic and Methylomic Biomarkers 期刊论文
FRONTIERS IN GENETICS, 2019, 卷号: 10, 期号: 3, 页码: 1-13
Authors:  Feng, X (Feng, Xin)[ 1,2 ];  Li, JL (Li, Jialiang)[ 2,3 ];  Li, H (Li, Han)[ 2,3 ];  Chen, H (Chen, Hang)[ 1,2 ];  Li, F (Li, Fei)[ 2,3 ];  Liu, QW (Liu, Quewang)[ 1,2 ];  You, ZH (You, Zhu-Hong)[ 4 ];  Zhou, FF (Zhou, Fengfeng)[ 1,2,3 ]
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age  feature selection  TriVote  BRCA  classification  transcriptome  methylome  
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
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Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
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65nm  负偏压温度不稳定性  沟道宽度  
总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
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65 Nm Nmosfet  总剂量效应  热载流子效应  
γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
红外与激光工程, 2018, 卷号: 47, 期号: 9, 页码: 214-219
Authors:  马腾;  苏丹丹;  周航;  郑齐文;  崔江维;  魏莹;  余学峰;  郭旗
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场效应晶体管  可靠性  栅氧经时击穿  Γ射线  
辐射环境下的微纳米器件可靠性变化机理与试验方法研究 学位论文
博士, 北京: 中国科学院大学, 2017
Authors:  周航
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Cmos  热载流子  辐射效应  重离子辐照  Tddb  
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
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纳米PMOSFET负偏压温度不稳定性测试方法 期刊论文
固体电子学研究与进展, 2017, 卷号: 37, 期号: 6, 页码: 433-437
Authors:  崔江维;  郑齐文;  余徳昭;  周航;  苏丹丹;  马腾;  郭旗;  余学峰
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纳米器件  P沟道金属氧化物半导体场效应晶体管  负偏压温度不稳定性  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
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Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
超深亚微米互补金属氧化物半导体器件的剂量率效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 7, 页码: 258-263
Authors:  郑齐文;  崔江维;  王汉宁;  周航;  余徳昭;  魏莹;  苏丹丹
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总剂量辐射效应  超深亚微米  金属氧化物半导体场效应晶体管  静态随机存储器