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3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
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背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
Adobe PDF(326Kb)  |  Favorite  |  View/Download:28/0  |  Submit date:2019/05/09
图像传感器  CMOS  满阱容量  电离总剂量效应  
Age Is Important for the Early-Stage Detection of Breast Cancer on Both Transcriptomic and Methylomic Biomarkers 期刊论文
FRONTIERS IN GENETICS, 2019, 卷号: 10, 期号: 3, 页码: 1-13
Authors:  Feng, X (Feng, Xin)[ 1,2 ];  Li, JL (Li, Jialiang)[ 2,3 ];  Li, H (Li, Han)[ 2,3 ];  Chen, H (Chen, Hang)[ 1,2 ];  Li, F (Li, Fei)[ 2,3 ];  Liu, QW (Liu, Quewang)[ 1,2 ];  You, ZH (You, Zhu-Hong)[ 4 ];  Zhou, FF (Zhou, Fengfeng)[ 1,2,3 ]
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age  feature selection  TriVote  BRCA  classification  transcriptome  methylome  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
Adobe PDF(1340Kb)  |  Favorite  |  View/Download:91/1  |  Submit date:2019/01/03
CMOS active pixel sensor (APS)  SEE  Heavy ion  
辐照后互补金属氧化物半导体光子转移曲线和转换增益的测试方法 专利
专利类型: 发明专利, 公开号: CN106840613B, 公开日期: 2018-10-12,
Inventors:  李豫东;  冯婕;  马林东;  文林;  周东;  郭旗
Favorite  |  View/Download:4/0  |  Submit date:2019/08/06
基于递归算法的图像传感器单粒子效应瞬态亮斑识别方法 专利
专利类型: 发明专利, 公开号: CN108537809A, 公开日期: 2018-09-14,
Inventors:  文林;  李豫东;  冯婕;  周东;  张兴尧;  郭旗
Favorite  |  View/Download:2/0  |  Submit date:2019/08/06
一种基于热像素的电荷耦合器件电荷转移效率在轨测试方法 专利
专利类型: 发明专利, 公开号: CN107197236B, 公开日期: 2018-08-14,
Inventors:  文林;  李豫东;  冯婕;  王田珲;  于新;  周东;  郭旗
Favorite  |  View/Download:6/0  |  Submit date:2019/08/06
基于锰掺杂硫化锌纳米晶的爆炸物传感器阵列的制备方法 专利
专利类型: 发明专利, 公开号: CN105699438B, 公开日期: 2018-03-23,
Inventors:  吴钊峰;  周超玉;  祖佰祎;  窦新存
Favorite  |  View/Download:7/0  |  Submit date:2019/08/07
不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
Adobe PDF(727Kb)  |  Favorite  |  View/Download:42/0  |  Submit date:2018/07/24
质子  电荷耦合器件  辐射效应  注量率  缺陷  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2018/08/14