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3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
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背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
Adobe PDF(326Kb)  |  Favorite  |  View/Download:20/0  |  Submit date:2019/05/09
图像传感器  CMOS  满阱容量  电离总剂量效应  
Age Is Important for the Early-Stage Detection of Breast Cancer on Both Transcriptomic and Methylomic Biomarkers 期刊论文
FRONTIERS IN GENETICS, 2019, 卷号: 10, 期号: 3, 页码: 1-13
Authors:  Feng, X (Feng, Xin)[ 1,2 ];  Li, JL (Li, Jialiang)[ 2,3 ];  Li, H (Li, Han)[ 2,3 ];  Chen, H (Chen, Hang)[ 1,2 ];  Li, F (Li, Fei)[ 2,3 ];  Liu, QW (Liu, Quewang)[ 1,2 ];  You, ZH (You, Zhu-Hong)[ 4 ];  Zhou, FF (Zhou, Fengfeng)[ 1,2,3 ]
Adobe PDF(3526Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2019/04/18
age  feature selection  TriVote  BRCA  classification  transcriptome  methylome  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
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CMOS active pixel sensor (APS)  SEE  Heavy ion  
不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
Adobe PDF(727Kb)  |  Favorite  |  View/Download:38/0  |  Submit date:2018/07/24
质子  电荷耦合器件  辐射效应  注量率  缺陷  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
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Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:37/0  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
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65nm  负偏压温度不稳定性  沟道宽度  
总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1083Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2018/03/19
65 Nm Nmosfet  总剂量效应  热载流子效应  
γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
红外与激光工程, 2018, 卷号: 47, 期号: 9, 页码: 214-219
Authors:  马腾;  苏丹丹;  周航;  郑齐文;  崔江维;  魏莹;  余学峰;  郭旗
Favorite  |  View/Download:20/0  |  Submit date:2018/10/18
场效应晶体管  可靠性  栅氧经时击穿  Γ射线