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3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
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背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
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图像传感器  CMOS  满阱容量  电离总剂量效应  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
Adobe PDF(1340Kb)  |  Favorite  |  View/Download:91/1  |  Submit date:2019/01/03
CMOS active pixel sensor (APS)  SEE  Heavy ion  
CCD及CMOS图像传感器的质子位移损伤等效分析 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 2, 页码: 44-48
Authors:  于新;  荀明珠;  郭旗;  何承发;  李豫东;  文林;  张兴尧;  周东
Adobe PDF(938Kb)  |  Favorite  |  View/Download:23/0  |  Submit date:2019/07/29
位移损伤效应  非电离能量损失  CCD  CMOS  
辐照后互补金属氧化物半导体光子转移曲线和转换增益的测试方法 专利
专利类型: 发明专利, 公开号: CN106840613B, 公开日期: 2018-10-12,
Inventors:  李豫东;  冯婕;  马林东;  文林;  周东;  郭旗
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基于递归算法的图像传感器单粒子效应瞬态亮斑识别方法 专利
专利类型: 发明专利, 公开号: CN108537809A, 公开日期: 2018-09-14,
Inventors:  文林;  李豫东;  冯婕;  周东;  张兴尧;  郭旗
Favorite  |  View/Download:2/0  |  Submit date:2019/08/06
一种基于热像素的电荷耦合器件电荷转移效率在轨测试方法 专利
专利类型: 发明专利, 公开号: CN107197236B, 公开日期: 2018-08-14,
Inventors:  文林;  李豫东;  冯婕;  王田珲;  于新;  周东;  郭旗
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不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
Adobe PDF(727Kb)  |  Favorite  |  View/Download:42/0  |  Submit date:2018/07/24
质子  电荷耦合器件  辐射效应  注量率  缺陷  
Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 4, 页码: 1-4
Authors:  Zhou, D (Zhou, Dong);  Wu, LC (Wu, Liangcai);  Wen, L (Wen, Lin);  Ma, LY (Ma, Liya);  Zhang, XY (Zhang, Xingyao);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Song, ZT (Song, Zhitang)
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Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2018/08/14