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Lyophobicity may not be the main driving force for long chain surfactants from the bulk phase to the interface 期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 卷号: 20, 期号: 15, 页码: 10165-10172
Authors:  Liang, YZ (Liang, Yuanzhen);  Zhang, S (Zhang, Si);  Wu, W (Wu, Wei);  Yang, FY (Yang, Fangyuan);  Gan, W (Gan, Wei);  Jia, HZ (Jia, Hangzhong);  Chen, SL (Chen, Shunli);  Zhu, XF (Zhu, Xuefeng);  Yuan, QH (Yuan, Qunhui)
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Evidence of the adsorption of hydroxide ion at hexadecane/water interface from second harmonic generation study 期刊论文
RSC ADVANCES, 2015, 卷号: 5, 期号: 30, 页码: 23578-23585
Authors:  Fang, H (Fang, Hui);  Wu, W (Wu, Wei);  Sang, YJ (Sang, Yajun);  Chen, SL (Chen, Shunli);  Zhu, XF (Zhu, Xuefeng);  Zhang, LB (Zhang, Libo);  Niu, YY (Niu, Yuanyuan);  Gan, W (Gan, Wei);  Gan, W
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电子束辐照效应模拟试验平台及其应用 成果
新疆维吾尔自治区科学技术进步奖, 2014
Accomplishers:  郭红霞;  郭旗;  陈伟;  何承发;  罗尹虹;  陆妩;  张凤祁;  文林;  赵雯;  余学峰;  孙静;  吕小龙
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Microstructure and energy-storage performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O-3 antiferroelectric thick films 期刊论文
MATERIALS RESEARCH BULLETIN, 2013, 卷号: 48, 期号: 1, 页码: 84-88
Authors:  Hao Xihong;  Wang Peng;  Zhang Xuefeng;  Xu Jinbao
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Electronic Materials  Electrical Properties  Energy Storage  
Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 7, 页码: 074008-1-074008-6
Authors:  Zheng, Qiwen;  Yu, Xuefeng;  Cui, Jiangwei;  Guo, Qi;  Cong, Zhongchao;  Zhang, Xingyao;  Deng, Wei;  Zhang, Xiaofu;  Wu, Zhengxin
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Silicon-on-insulator  Hot-carrier Effect  Hump  Back Gate  
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 64-67
Authors:  Cui, Jiangwei;  Xue, Yaoguo;  Yu, Xuefeng;  Ren, Diyuan;  Lu, Jian;  Zhang, Xingyao
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不同偏置下CMOS SRAM辐射损伤效应 期刊论文
核技术, 2012, 卷号: 35, 期号: 8, 页码: 601-605
Authors:  卢健;  余学峰;  李明;  张乐情;  崔江维;  郑齐文;  胥佳灵
Adobe PDF(692Kb)  |  Favorite  |  View/Download:170/14  |  Submit date:2012/11/29
静态随机存储器  总剂量效应  不同偏置条件  辐射损伤  印记现象  
剂量率对PMOS剂量计辐射响应的影响 期刊论文
微电子学, 2009, 卷号: 39, 期号: 1, 页码: 128-131
Authors:  孙静;  郭旗;  张军;  任迪远;  陆妩;  余学锋;  文林;  王改丽;  郑玉展
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Pmosfet  剂量计  剂量率  阈值响应  灵敏度  
不同剂量率下MOSFET的电离辐照效应 会议论文
, 重庆, 2007
Authors:  张华林;  陆妩;  任迪远;  余学峰;  郭旗
Adobe PDF(241Kb)  |  Favorite  |  View/Download:148/1  |  Submit date:2013/04/09
Mosfet  电离辐照  数字集成电路  阈电压漂移  
MOSFET's damage induced by hot carrier injection and its annealing 期刊论文
Research & Progress of Solid State Electronics, 2006, 卷号: 26, 期号: 4, 页码: 560-563
Authors:  Yu Xuefeng;  Erken;  Ren Diyuan;  Zhang Guoqiang;  Lu Wu;  Guo Qi
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