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K3B6O9F3: A New Fluorooxoborate with Four Different Anionic Units 期刊论文
CHEMISTRY-A EUROPEAN JOURNAL, 2018, 卷号: 24, 期号: 18, 页码: 4497-4502
Authors:  Han, GP (Han, Guopeng)[ 1,2 ];  Shi, GQ (Shi, Guoqiang)[ 1,2 ];  Wang, Y (Wang, Ying)[ 1 ];  Zhang, BB (Zhang, Bingbing)[ 1 ];  Han, SJ (Han, Shujuan)[ 1 ];  Zhang, FF (Zhang, Fangfang)[ 1 ];  Yang, ZH (Yang, Zhihua)[ 1 ];  Pan, SL (Pan, Shilie)[ 1 ]
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Deep-ultraviolet  Fluorooxoborate  Fundamental Building Block  Synthesis  
Fluorooxoborates: Beryllium-Free Deep-Ultraviolet Nonlinear Optical Materials without Layered Growth 期刊论文
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2017, 卷号: 56, 期号: 14, 页码: 3916-3919
Authors:  Zhang, BB (Zhang, Bingbing);  Shi, GQ (Shi, Guoqiang);  Yang, ZH (Yang, Zhihua);  Zhang, FF (Zhang, Fangfang);  Pan, SL (Pan, Shilie);  Yang, ZH;  Pan, SL
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Boron  Deep-ultraviolet  Fluorooxoborates  Nonlinear Optical Materials  Second Harmonic Generation  
Na2B6O9F2: A Fluoroborate with Short Cutoff Edge and Deep-Ultraviolet Birefringent Property Prepared by an Open High-Temperature Solution Method 期刊论文
INORGANIC CHEMISTRY, 2017, 卷号: 56, 期号: 1, 页码: 344-350
Authors:  Shi, GQ (Shi, Guoqiang);  Zhang, FF (Zhang, Fangfang);  Zhang, BB (Zhang, Bingbing);  Hou, DW (Hou, Dianwei);  Chen, XL (Chen, Xinglong);  Yang, ZH (Yang, Zhihua);  Pan, SL (Pan, Shilie)
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Experimental and ab initio studies of two UV nonlinear optical materials 期刊论文
RSC ADVANCES, 2017, 卷号: 7, 期号: 33, 页码: 20259-20265
Authors:  Lu, JJ (Lu, Juanjuan);  Shi, GQ (Shi, Guoqiang);  Wu, HP (Wu, Hongping);  Wen, M (Wen, Ming);  Hou, DW (Hou, Dianwei);  Yang, ZH (Yang, Zhihua);  Zhang, FF (Zhang, Fangfang);  Pan, SL (Pan, Shilie)
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MOSFET's damage induced by hot carrier injection and its annealing 期刊论文
Research & Progress of Solid State Electronics, 2006, 卷号: 26, 期号: 4, 页码: 560-563
Authors:  Yu Xuefeng;  Erken;  Ren Diyuan;  Zhang Guoqiang;  Lu Wu;  Guo Qi
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Si/SiO2系统的总剂量辐射损伤及辐射感生界面态的能级分布 期刊论文
核电子学与探测技术, 2006, 卷号: 26, 期号: 3, 页码: 328-330
Authors:  余学峰;  张国强;  艾尔肯;  郭旗;  陆妩;  任迪远
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Mos电容  氧化物电荷  界面态  能级分布  
Hot-carrier injection induced interface states in MOS structure and their annealing characteristics 期刊论文
Nuclear Techniques, 2006, 卷号: 29, 期号: 1, 页码: 19-21
Authors:  Yu Xuefeng;  Ai Erken;  Ren Diyuan;  Guo Qi;  Zhang Guoqiang;  Lu Wu
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MOS结构热载子注入与总剂量辐照响应的相关性 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 10, 页码: 1975-1978
Authors:  余学峰;  任迪远;  艾尔肯;  张国强;  陆妩;  郭旗
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热载子注入  总剂量辐照  相关性  
不同注F剂量与CMOS运放电路辐照损伤的相关性 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 7, 页码: 780-784
Authors:  任迪远;  陆妩;  余学锋;  郭旗;  张国强;  胡浴红;  王明刚;  赵文魁
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注fcmos运算放大器  电离辐照  跨导  
抗高电离辐射MOS新介质与损伤模拟分析技术的研究 成果
新疆维吾尔自治区科技进步奖;, 1995
Accomplishers:  张国强;  王国彬;  严荣良;  任迪远;  余学峰;  高剑侠;  罗来会;  陆妩;  范隆;  高文钰;  郭旗;  魏锡智
Favorite  |  View/Download:97/0  |  Submit date:2013/11/20