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Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1503-1510
Authors:  Yang, L (Yang, Ling)[ 1,2 ];  Zhang, QZ (Zhang, Qingzhu)[ 1,3 ];  Huang, YB (Huang, Yunbo)[ 1,2 ];  Zheng, ZS (Zheng, Zhongshan)[ 1,2 ];  Li, B (Li, Bo)[ 1,2 ];  Li, BH (Li, Binhong)[ 1,2 ];  Zhang, XY (Zhang, Xingyao)[ 4 ];  Zhu, HP (Zhu, Huiping)[ 1,2 ];  Yin, HX (Yin, Huaxiang)[ 1,3 ];  Guo, Q (Guo, Qi)[ 4 ];  Luo, JJ (Luo, Jiajun)[ 1,2 ];  Han, ZS (Han, Zhengsheng)[ 1,2 ]
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Anneal  Finfet  On-state Bias  Total Ionizing Dose (Tid)