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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
双多晶自对准NPN管的总剂量辐射效应研究 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 120-125
Authors:  贾金成;  陆妩;  吴雪;  张培健;  孙静;  王信;  李小龙;  刘默寒;  郭旗;  刘元
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双多晶自动准  Npn管  60co-γ辐射  辐射损伤  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
模拟NTC尖晶石内电子态密度微观变化的数据处理方法 专利
专利类型: 发明专利, 公开号: CN104462733B, 公开日期: 2017-09-01,
Inventors:  边亮;  徐金宝;  常爱民;  李海龙;  宋绵新;  董发勤;  睢贺良;  侯文平;  王磊;  张晓艳
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模拟晶体内小概率原子电输运转变的二维数据处理方法 专利
专利类型: 发明专利, 公开号: CN104462864B, 公开日期: 2017-08-15,
Inventors:  边亮;  宋绵新;  徐金宝;  董发勤;  李伟民;  常爱民;  李海龙;  王磊;  张晓艳;  侯文平
Favorite  |  View/Download:3/0  |  Submit date:2019/08/08
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
mTOR ATP-competitive inhibitor INK128 inhibits neuroblastoma growth via blocking mTORC signaling 期刊论文
APOPTOSIS, 2015, 卷号: 20, 期号: 1, 页码: 50-62
Authors:  Zhang, HY (Zhang, Huiyuan);  Dou, J (Dou, Jun);  Yu, Y (Yu, Yang);  Zhao, YL (Zhao, Yanling);  Fan, YH (Fan, Yihui);  Cheng, J (Cheng, Jin);  Xu, X (Xu, Xin);  Liu, W (Liu, Wei);  Guan, S (Guan, Shan);  Chen, ZH (Chen, Zhenghu);  Shi, Y (Shi, Yan);  Patel, R (Patel, Roma);  Vasudevan, SA (Vasudevan, Sanjeev A.);  Zage, PE (Zage, Peter E.);  Zhang, H (Zhang, Hong);  Nuchtern, JG (Nuchtern, Jed G.);  Kim, ES (Kim, Eugene S.);  Fu, SB (Fu, Songbin);  Yang, JH (Yang, Jianhua)
Adobe PDF(1334Kb)  |  Favorite  |  View/Download:239/0  |  Submit date:2015/03/11
Neuroblastoma  Mtor Inhibitor  Ink128  Chemotherapy  Drug Resistance  
锗硅异质结双极晶体管单粒子效应加固设计与仿真 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 415-421
Authors:  李培;  郭红霞;  郭旗;  文林;  崔江维;  王信;  张晋新
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锗硅异质结双极晶体管  单粒子效应  加固设计  伪集电极  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
Adobe PDF(1156Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2017/09/14
Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment  
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei);  Wang, X (Wang Xin);  Zhang, JX (Zhang Jin-Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Hardening Design  Dummy Collector