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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
Adobe PDF(227Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2019/05/09
背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
Adobe PDF(326Kb)  |  Favorite  |  View/Download:28/0  |  Submit date:2019/05/09
图像传感器  CMOS  满阱容量  电离总剂量效应  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
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CMOS active pixel sensor (APS)  SEE  Heavy ion  
Designed formation of NiCo2O4 with different morphologies self-assembled from nanoparticles for asymmetric supercapacitors and electrocatalysts for oxygen evolution reaction 期刊论文
ELECTROCHIMICA ACTA, 2019, 卷号: 296, 期号: 2, 页码: 719-729
Authors:  Fu, HH (Fu, Haihai)[ 1 ];  Liu, Y (Liu, Yi)[ 2 ];  Chen, L (Chen, Long)[ 1 ];  Shi, YL (Shi, Yulin)[ 1 ];  Kong, WW (Kong, Wenwen)[ 3 ];  Hou, J (Hou, Juan)[ 1 ];  Yu, F (Yu, Feng)[ 1 ];  Wei, TT (Wei, Tingting)[ 1 ];  Wang, H (Wang, Hao)[ 1 ];  Guo, XH (Guo, Xuhong)[ 1,4 ]
Adobe PDF(4613Kb)  |  Favorite  |  View/Download:45/0  |  Submit date:2019/01/16
NiCo2O4  Morphology  Asymmetric supercapacitor  Oxygen evolution reaction  
辐照后互补金属氧化物半导体光子转移曲线和转换增益的测试方法 专利
专利类型: 发明专利, 公开号: CN106840613B, 公开日期: 2018-10-12,
Inventors:  李豫东;  冯婕;  马林东;  文林;  周东;  郭旗
Favorite  |  View/Download:4/0  |  Submit date:2019/08/06
基于递归算法的图像传感器单粒子效应瞬态亮斑识别方法 专利
专利类型: 发明专利, 公开号: CN108537809A, 公开日期: 2018-09-14,
Inventors:  文林;  李豫东;  冯婕;  周东;  张兴尧;  郭旗
Favorite  |  View/Download:2/0  |  Submit date:2019/08/06
一种基于热像素的电荷耦合器件电荷转移效率在轨测试方法 专利
专利类型: 发明专利, 公开号: CN107197236B, 公开日期: 2018-08-14,
Inventors:  文林;  李豫东;  冯婕;  王田珲;  于新;  周东;  郭旗
Favorite  |  View/Download:6/0  |  Submit date:2019/08/06
互补金属氧化物半导体图像传感器单粒子效应试验图像在线采集方法 专利
专利类型: 发明专利, 公开号: CN108401151A, 公开日期: 2018-08-14,
Inventors:  李豫东;  文林;  冯婕;  施炜雷;  于新;  玛丽娅·黑尼;  郭旗
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一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 专利
专利类型: 发明专利, 公开号: CN108037438A, 公开日期: 2018-05-15,
Inventors:  崔江维;  郑齐文;  魏莹;  孙静;  余学峰;  郭旗;  陆妩;  何承发;  任迪远
Favorite  |  View/Download:6/0  |  Submit date:2019/08/06