XJIPC OpenIR

Browse/Search Results:  1-9 of 9 Help

Selected(0)Clear Items/Page:    Sort:
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
Adobe PDF(1320Kb)  |  Favorite  |  View/Download:50/0  |  Submit date:2018/07/06
65nm  负偏压温度不稳定性  沟道宽度  
纳米PMOSFET负偏压温度不稳定性测试方法 期刊论文
固体电子学研究与进展, 2017, 卷号: 37, 期号: 6, 页码: 433-437
Authors:  崔江维;  郑齐文;  余徳昭;  周航;  苏丹丹;  马腾;  郭旗;  余学峰
Adobe PDF(1113Kb)  |  Favorite  |  View/Download:24/0  |  Submit date:2018/01/18
纳米器件  P沟道金属氧化物半导体场效应晶体管  负偏压温度不稳定性  
星用纳米MOS器件的总剂量辐射效应与NBTI效应研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  余德昭
Adobe PDF(1666Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2016/09/27
Mosfet  辐射效应  Nbti  可靠性  
超深亚微米互补金属氧化物半导体器件的剂量率效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 7, 页码: 258-263
Authors:  郑齐文;  崔江维;  王汉宁;  周航;  余徳昭;  魏莹;  苏丹丹
Adobe PDF(520Kb)  |  Favorite  |  View/Download:110/0  |  Submit date:2016/06/02
总剂量辐射效应  超深亚微米  金属氧化物半导体场效应晶体管  静态随机存储器  
总剂量效应致0.13μm部分耗尽绝缘体上硅N型金属氧化物半导体场效应晶体管热载流子增强效应 期刊论文
物理学报, 2016, 卷号: 65, 期号: 9, 页码: 242-249
Authors:  周航;  郑齐文;  崔江维;  余学峰;  郭旗;  任迪远;  余德昭;  苏丹丹
Adobe PDF(808Kb)  |  Favorite  |  View/Download:109/0  |  Submit date:2016/06/02
绝缘体上硅  电离辐射  热载流子  
Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 7, 页码: 1-3
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Yu, DZ (Yu, De-Zhao);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
Adobe PDF(414Kb)  |  Favorite  |  View/Download:93/1  |  Submit date:2016/12/07
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Wei, Y (Wei Ying);  Su, DD (Su Dan-Dan)
Adobe PDF(406Kb)  |  Favorite  |  View/Download:65/0  |  Submit date:2016/12/12
Total Ionizing Dose Effects  Deep Sub-micron  Metal Oxide Semiconductor Field Effect Transistor  Static Random Access Memory  
Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao);  Yu, XF (Yu Xue-Feng);  Lu, W (Lu Wu);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
Adobe PDF(315Kb)  |  Favorite  |  View/Download:24/0  |  Submit date:2017/09/21
Total Dose Irradiation  Static Random Access Memory  Functional Failure Mode