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一种使用变温光致发光谱测试分析太阳电池辐射效应的方法 专利
专利类型: 发明专利, 公开号: CN109459418A, 公开日期: 2019-03-12,
Inventors:  艾尔肯·阿不都瓦衣提;  慎小宝;  玛丽娅·黑尼;  赵晓凡;  莫敏·赛来;  许焱;  雷琪琪;  李豫东;  郭旗
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一种低温光致发光快速高效测试方法 专利
专利类型: 发明专利, 公开号: CN109238969A, 公开日期: 2019-01-18,
Inventors:  艾尔肯·阿不都瓦衣提;  赵晓凡;  玛丽娅·黑尼;  莫敏·塞来;  慎小宝;  许焱;  雷琪琪;  李豫东;  郭旗
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一种光致发光测试中避免激发激光谐波影响的方法 专利
专利类型: 发明专利, 公开号: CN109187445A, 公开日期: 2019-01-11,
Inventors:  玛丽娅·黑尼;  莫敏·塞来;  艾尔肯·阿不都瓦衣提;  赵晓凡;  慎小宝;  许焱;  雷琪琪;  李豫东;  郭旗
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一种提高低温光致发光测试精度的实验方法 专利
专利类型: 发明专利, 公开号: CN109187349A, 公开日期: 2019-01-11,
Inventors:  艾尔肯·阿不都瓦衣提;  雷琪琪;  莫敏·塞来;  马丽娅·黑尼;  赵晓凡;  慎小宝;  许焱;  李豫东;  郭旗
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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
Authors:  Xu, Y (Xu, Yan)[ 1,2 ];  Heini, M (Heini, Maliya)[ 2 ];  Shen, XB (Shen, Xiaobao)[ 2,3 ];  Aierken, A (Aierken, Abuduwayiti)[ 2,4 ];  Zhao, XF (Zhao, Xiaofan)[ 2 ];  Sailai, M (Sailai, Momin)[ 2 ];  Lu, W (Lu, Wu)[ 2 ];  Tan, M (Tan, Ming)[ 5 ];  Wu, YY (Wu, Yuanyuan)[ 5 ];  Lu, SL (Lu, Shulong)[ 5 ];  Li, YD (Li, Yudong)[ 2 ];  Guo, Q (Guo, Qi)[ 2 ]
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一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 专利
专利类型: 发明专利, 公开号: CN108037438A, 公开日期: 2018-05-15,
Inventors:  崔江维;  郑齐文;  魏莹;  孙静;  余学峰;  郭旗;  陆妩;  何承发;  任迪远
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水合硼酸钾和水合硼酸钾非线性光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN107761161A, 公开日期: 2018-03-06,
Inventors:  潘世烈;  刘琼;  张香玉;  杨志华;  龙西法
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Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
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Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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