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Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
Adobe PDF(1340Kb)  |  Favorite  |  View/Download:75/1  |  Submit date:2019/01/03
CMOS active pixel sensor (APS)  SEE  Heavy ion  
Designed formation of NiCo2O4 with different morphologies self-assembled from nanoparticles for asymmetric supercapacitors and electrocatalysts for oxygen evolution reaction 期刊论文
ELECTROCHIMICA ACTA, 2019, 卷号: 296, 期号: 2, 页码: 719-729
Authors:  Fu, HH (Fu, Haihai)[ 1 ];  Liu, Y (Liu, Yi)[ 2 ];  Chen, L (Chen, Long)[ 1 ];  Shi, YL (Shi, Yulin)[ 1 ];  Kong, WW (Kong, Wenwen)[ 3 ];  Hou, J (Hou, Juan)[ 1 ];  Yu, F (Yu, Feng)[ 1 ];  Wei, TT (Wei, Tingting)[ 1 ];  Wang, H (Wang, Hao)[ 1 ];  Guo, XH (Guo, Xuhong)[ 1,4 ]
Adobe PDF(4613Kb)  |  Favorite  |  View/Download:30/0  |  Submit date:2019/01/16
NiCo2O4  Morphology  Asymmetric supercapacitor  Oxygen evolution reaction  
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
Adobe PDF(227Kb)  |  Favorite  |  View/Download:11/0  |  Submit date:2019/05/09
背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
Adobe PDF(326Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2019/05/09
图像传感器  CMOS  满阱容量  电离总剂量效应  
不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
Adobe PDF(727Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2018/07/24
质子  电荷耦合器件  辐射效应  注量率  缺陷  
Clarification of Active Sites at Interfaces between Silica Support and Nickel Active Components for Carbon Monoxide Methanation 期刊论文
CATALYSTS, 2018, 卷号: 8, 期号: 7, 页码: 1-11
Authors:  Zhang, MJ (Zhang, Mengjuan);  Li, PP (Li, Panpan);  Tian, ZQ (Tian, Zhiqun);  Zhu, MY (Zhu, Mingyuan);  Wang, F (Wang, Fu);  Li, JB (Li, Jiangbing);  Dai, B (Dai, Bin);  Yu, F (Yu, Feng);  Qiu, HS (Qiu, Hengshan);  Gao, HW (Gao, Hongwei)
Adobe PDF(4449Kb)  |  Favorite  |  View/Download:21/0  |  Submit date:2018/08/07
Active Sites  Carbon Monoxide Methanation  Ammonia-evaporation Method  In Situ Vacuum Transmission Infrared Spectroscopy  Density-functional Theory  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:56/0  |  Submit date:2018/08/14
质子辐射导致CCD热像素产生的机制研究 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 115-119+125
Authors:  刘元;  文林;  李豫东;  何承发;  郭旗;  孙静;  冯婕;  曾俊哲;  马林东;  张翔;  王田珲
Adobe PDF(756Kb)  |  Favorite  |  View/Download:40/0  |  Submit date:2018/03/19
电荷耦合器件  质子辐射效应  热像素  
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
Adobe PDF(589Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2018/03/14
Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)