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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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