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Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 56, 期号: 3, 页码: 1-5
Authors:  Zhou, SX (Zhou, Shuxing);  Qi, M (Qi, Ming);  Ai, LK (Ai, Likun);  Wang, SM (Wang, Shumin);  Xu, AH (Xu, Anhuai);  Guo, Q (Guo, Qi)
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