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化合物钾硼碳氧溴氢和钾硼碳氧溴氢非线性光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN109183154A, 公开日期: 2019-01-11,
Inventors:  潘世烈;  张雪艳;  吴红萍
Favorite  |  View/Download:5/0  |  Submit date:2019/08/06
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
变温辐照对双极电压比较器LM2903在不同偏置状态下的单粒子瞬态影响 期刊论文
原子能科学技术, 2019, 卷号: 53, 期号: 6, 页码: 1122-1126
Authors:  姚帅;  陆妩;  于新;  李小龙;  王信;  刘默寒;  孙静;  常耀东;  席善学;  何承发;  郭旗
Adobe PDF(459Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2019/06/21
变温辐照方法  双极电压比较器  电离总剂量  单粒子瞬态  偏置状态  协同效应  
体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
Adobe PDF(2605Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2019/06/21
总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
化合物钾硼碳氧氯氢和钾硼碳氧氯氢非线性光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN109112612A, 公开日期: 2019-01-01,
Inventors:  潘世烈;  张雪艳;  吴红萍
Favorite  |  View/Download:2/0  |  Submit date:2019/08/06
一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 专利
专利类型: 发明专利, 公开号: CN108037438A, 公开日期: 2018-05-15,
Inventors:  崔江维;  郑齐文;  魏莹;  孙静;  余学峰;  郭旗;  陆妩;  何承发;  任迪远
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双多晶自对准NPN管的总剂量辐射效应研究 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 120-125
Authors:  贾金成;  陆妩;  吴雪;  张培健;  孙静;  王信;  李小龙;  刘默寒;  郭旗;  刘元
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双多晶自动准  Npn管  60co-γ辐射  辐射损伤  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:32/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)