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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:26/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
变温辐照对双极电压比较器LM2903在不同偏置状态下的单粒子瞬态影响 期刊论文
原子能科学技术, 2019, 卷号: 53, 期号: 6, 页码: 1122-1126
Authors:  姚帅;  陆妩;  于新;  李小龙;  王信;  刘默寒;  孙静;  常耀东;  席善学;  何承发;  郭旗
Adobe PDF(459Kb)  |  Favorite  |  View/Download:12/0  |  Submit date:2019/06/21
变温辐照方法  双极电压比较器  电离总剂量  单粒子瞬态  偏置状态  协同效应  
体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
Adobe PDF(2605Kb)  |  Favorite  |  View/Download:12/0  |  Submit date:2019/06/21
总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
双多晶自对准NPN管的总剂量辐射效应研究 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 120-125
Authors:  贾金成;  陆妩;  吴雪;  张培健;  孙静;  王信;  李小龙;  刘默寒;  郭旗;  刘元
Adobe PDF(1160Kb)  |  Favorite  |  View/Download:47/0  |  Submit date:2018/03/19
双多晶自动准  Npn管  60co-γ辐射  辐射损伤  
Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
Adobe PDF(713Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/05/07
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1450Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:38/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
Adobe PDF(1075Kb)  |  Favorite  |  View/Download:122/1  |  Submit date:2016/06/02
双极线性稳压器  辐射效应  辐照温度  
红花籽粕降糖有效部位的纯化工艺 期刊论文
中国医药导报, 2016, 卷号: 13, 期号: 21, 页码: 16-20
Authors:  萨拉麦提·艾迪热斯;  武鹤婷;  阿不拉江·图拉克;  田华;  信学雷;  阿吉艾克拜尔·艾萨
Adobe PDF(343Kb)  |  Favorite  |  View/Download:72/0  |  Submit date:2016/12/03
红花籽粕  大孔树脂  纯化  降糖作用