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Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
Authors:  Yao, S (Yao, Shuai)[ 1,2,3 ];  Lu, W (Lu, Wu)[ 1,2,4 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Li, XL (Li, Xiaolong)[ 1,2,3 ];  Liu, MH (Liu, Mohan)[ 1,2,3 ];  Sun, J (Sun, Jing)[ 1,2 ];  Wei, XY (Wei, XinYu)[ 1,2 ];  Chang, YD (Chang, YaoDong)[ 1,2 ];  Guo, Q (Guo, Qi)[ 1,2 ];  He, CF (He, ChengFa)[ 1,2 ]
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Enhanced low dose rate sensitivity  single event transient  bipolar voltage comparator  synergistic effect  
国产双极工艺线性电路低剂量率辐照效应评估方法 期刊论文
航天器环境工程, 2019, 卷号: 36, 期号: 2, 页码: 146-150
Authors:  李鹏伟;  吕贺;  张洪伟;  孙明;  刘凡;  孙静
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线性电路  低剂量率辐照  辐射损伤增强因子  抗辐射能力  
体效应对超深亚微米SOI器件总剂量效应的影响 期刊论文
电子学报, 2019, 卷号: 47, 期号: 5, 页码: 1065-1069
Authors:  席善学;  陆妩;  郑齐文;  崔江维;  魏莹;  姚帅;  赵京昊;  郭旗
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总剂量效应  绝缘体上硅  体效应  浅沟槽隔离  
溶胶-凝胶法制备洛克沙砷表面分子印迹聚合物及其性能研究 期刊论文
分析试验室, 2019, 卷号: 38, 期号: 1, 页码: 1-6
Authors:  徐鲁;  郅轲轲;  张亚刚;  范维刚;  姜莹芳;  王璐璐
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洛克沙砷  分子印迹聚合物  硅胶载体  溶胶-凝胶法  
一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 专利
专利类型: 发明专利, 公开号: CN108037438A, 公开日期: 2018-05-15,
Inventors:  崔江维;  郑齐文;  魏莹;  孙静;  余学峰;  郭旗;  陆妩;  何承发;  任迪远
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一种基于Matlab的图像传感器RTS噪声检测分析系统 专利
专利类型: 发明专利, 公开号: CN104853117B, 公开日期: 2018-03-20,
Inventors:  郭旗;  王帆;  李豫东;  汪波;  张兴尧;  何承发;  文林;  陆妩;  施炜雷;  孙静;  李小龙;  余德昭;  武大猷;  玛利亚·黑尼
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基于钴源辐照的光释光测年方法研究 期刊论文
科技视界, 2018, 期号: 11, 页码: 91-93
Authors:  邹德洋;  何承发;  陆妩;  张峰;  葛本伟
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钴源  光释光测年  石英  能量沉积  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
国产pnp双极晶体管在宽总剂量范围辐照下的ELDRS 期刊论文
半导体技术, 2018, 卷号: 43, 期号: 5, 页码: 369-374
Authors:  魏昕宇;  陆妩;  李小龙;  王信;  孙静;  于新;  姚帅;  刘默寒;  郭旗
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国产pnp型双极晶体管  宽总剂量范围  低剂量率损伤增强效应(Eldrs)  辐射损伤  剂量率  
Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
Authors:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin);  He, CF (He, Chengfa);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mohan);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xinyu)查看 ResearcherID 和 ORCID
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Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)