XJIPC OpenIR

Browse/Search Results:  1-8 of 8 Help

Selected(0)Clear Items/Page:    Sort:
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:19/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
Enhanced channel hot carrier effect of 0.13 mu m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 9
Authors:  Zhou, H (Zhou Hang);  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, DZ (Yu De-Zhao);  Su, DD (Su Dan-Dan);  Yu, XF
Adobe PDF(619Kb)  |  Favorite  |  View/Download:61/0  |  Submit date:2016/12/12
Silicon-on-insulator  Ionizing Radiation  Hot Carriers  
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei);  Li, B (Li Bin);  Lu, YD (Lu Yu-Dong)
Adobe PDF(574Kb)  |  Favorite  |  View/Download:22/0  |  Submit date:2018/01/25
SilicOn On Insulator  Ion implantatIon  Ionizing Radiation  Low Frequency Noise  
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
Adobe PDF(465Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/01/26
Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 7
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  He, YJ (He Yu-Juan);  Wang, X (Wang Xin);  Yue, L (Yue Long);  En, YF (En Yun-Fei);  Liu, MH (Liu Mo-Han)
Adobe PDF(507Kb)  |  Favorite  |  View/Download:19/0  |  Submit date:2018/01/26
SilicOn On Insulator  Partially Depleted  Ionizing Radiation  Low Frequency Noise  
Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 7, 页码: 074008-1-074008-6
Authors:  Zheng, Qiwen;  Yu, Xuefeng;  Cui, Jiangwei;  Guo, Qi;  Cong, Zhongchao;  Zhang, Xingyao;  Deng, Wei;  Zhang, Xiaofu;  Wu, Zhengxin
Adobe PDF(645Kb)  |  Favorite  |  View/Download:149/0  |  Submit date:2014/11/11
Silicon-on-insulator  Hot-carrier Effect  Hump  Back Gate  
research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 10, 页码: -
Authors:  Li Ming;  Yu Xue-Feng;  Xue Yao-Guo;  Lu Jian;  Cui Jiang-Wei;  Gao Bo
Adobe PDF(858Kb)  |  Favorite  |  View/Download:495/5  |  Submit date:2012/11/29
Partial-depletion-silicon-on Insulator  Static Random Access Memory  Total-dose Effects  Power Supply Current