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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
High tolerance of proton irradiation of Ge2Sb2Te5 phase change material 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 卷号: 575, 期号: 10, 页码: 229-232
Authors:  Zhou Dong;  Wu Liangcai;  Guo Qi;  Peng Cheng;  He Chengfa;  Song Zhitang;  Rao Feng;  Li Yudong;  Xi Shanbin
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Phase Change Material  Ge2sb2te5  Proton Irradiation  Radiation Damage  
Degradation and dose rate effects of bipolar linear regulator on ionizing radiation 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: 500-508
Authors:  Wang Yi-Yuan;  Lu Wu;  Ren Di-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa;  Gao Bo
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Bipolar Linear Regulators  Total Ionizing Dose  Dose Rate Effect  Radiation Damage  
Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Yi-Yuan;  Guo Qi;  Yu Xue-Feng;  He Cheng-Fa
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Emitter Area  Domestic Npn Transistors  Dose Rate  Radiation Damage  
Annealing behavior of radiation damage in JFET-input operational amplifiers 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 5, 页码: 60-64
Authors:  Zheng, Yuzhan;  Lu, Wu;  Ren, Diyuan;  Wang, Yiyuan;  Guo, Qi;  Yu, Xuefeng
Adobe PDF(147Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2014/11/11
Jfet-input Operational Amplifiers  Dose Rate  Radiation Damage  Annealing Behavior  
Electron-induced damage to NPN transistors under different fluxes 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2008, 卷号: 19, 期号: 6, 页码: 333-336
Authors:  Zheng Yuzhan;  Lu Wu;  Ren Diyuan;  Guo Qi;  Yu Xuefeng;  Lue Xiaolong;  Lu, W
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Electron Flux  Npn Transistor  Radiation Damage