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一种含钙四元系负温度系数热敏电阻材料及其制备方法 专利
专利类型: 发明专利, 公开号: CN109256246A, 公开日期: 2019-01-22,
Inventors:  张惠敏;  马盼飞;  姜辉;  常爱民
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Order-Disorder Transition of Carboxyl Terminated Chains in Polydiacetylenes Vesicles Probed by Second Harmonic Generation and Two-Photon Fluorescence 期刊论文
CHINESE JOURNAL OF CHEMICAL PHYSICS, 2018, 卷号: 31, 期号: 3, 页码: 269-276
Authors:  Chen, SL (Chen, Shun-li);  Zhu, XF (Zhu, Xue-feng);  Yang, FY (Yang, Fang-yuan);  Pan, XC (Pan, Xue-cong);  Gan, W (Gan, Wei);  Yuan, QH (Yuan, Qun-hui)
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Polydiacetylenes Vesicle  Polymerization  Interfacial Adsorption  Second Harmonic Generation  Order-disorder Transition  
Synthesis, Crystal Structures, Optical Properties and Theoretical Calculations of Two Metal Chalcogenides Ba2AlSbS5 and Ba2GaBiSe5 期刊论文
CRYSTALS, 2018, 卷号: 8, 期号: 4, 页码: 1-10
Authors:  Wu, XW (Wu, Xiaowen)[ 1 ];  Gu, XF (Gu, Xiaofeng)[ 1 ];  Pan, H (Pan, Hui)[ 1 ];  Hu, Y (Hu, Yi)[ 1 ];  Wu, K (Wu, Kui)[ 2 ]
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Metal Chalcogenides  Crystal Structure  Theoretical Calculation  
化合物硼酸锂钠双折射晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106917140A, 公开日期: 2017-07-04,
Inventors:  潘世烈;  陈艳娜;  张敏;  陈惠敏;  安东海
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磷酸铅非线性光学晶体及其制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106894086A, 公开日期: 2017-06-27,
Inventors:  潘世烈;  张辉;  张敏
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硫锑钠钡光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106835283A, 公开日期: 2017-06-13,
Inventors:  潘世烈;  高文慧;  杨志华;  武奎
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硒锑钠钡光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106835282A, 公开日期: 2017-06-13,
Inventors:  潘世烈;  高文慧;  杨志华;  武奎
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氯酸铅红外非线性光学晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106544731A, 公开日期: 2017-03-29,
Inventors:  潘世烈;  张辉;  张敏
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Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 卷号: 171, 期号: 11, 页码: 118-122
Authors:  Dai, P (Dai, Pan);  Ji, L (Ji, Lian);  Tan, M (Tan, Ming);  Uchida, S (Uchida, Shiro);  Wu, YY (Wu, Yuanyuan);  Abuduwayiti, A (Abuduwayiti, Aierken)[ 3 ];  Heini, M (Heini, Maliya);  Guo, Q (Guo, Qi);  Bian, LF (Bian, Lifeng);  Lu, SL (Lu, Shulong);  Yang, H (Yang, Hui)
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Electron Irradiation  Four-junction Solar Cell  Molecular Beam Epitaxy  
化合物偏硼酸钠双折射晶体及制备方法和用途 专利
专利类型: 发明专利, 公开号: CN106149055A, 公开日期: 2016-11-23,
Inventors:  潘世烈;  安东海;  张敏;  陈惠敏
Favorite  |  View/Download:1/0  |  Submit date:2019/08/08