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Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6
Authors:  Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Cui Jiang-Wei;  Lan Bo;  Li Ming;  Wang Yi-Yuan;  Yu, XF
Adobe PDF(352Kb)  |  Favorite  |  View/Download:160/1  |  Submit date:2012/11/29
P-type Metal-oxide-semiconductor Field-effect Transistor  Co-60 Gamma-ray  Total-dose Irradiation Damage Effects  Enhanced Low Dose Rate Sensitivity