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深亚微米CMOS图像传感器像素单元累积辐射效应研究 学位论文
博士, 北京: 中国科学院大学, 2019
Authors:  马林东
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CMOS图像传感器  总剂量效应  位移效应  
一种锰酸镧与氧化钇双层结构的负温度系数热敏复合陶瓷材料的制备方法 专利
专利类型: 发明专利, 公开号: CN109456059A, 公开日期: 2019-03-12,
Inventors:  赵青;  马琦璐;  何东林;  常爱民
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3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
Adobe PDF(227Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2019/05/09
背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
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图像传感器  CMOS  满阱容量  电离总剂量效应  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
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CMOS active pixel sensor (APS)  SEE  Heavy ion  
辐照后互补金属氧化物半导体光子转移曲线和转换增益的测试方法 专利
专利类型: 发明专利, 公开号: CN106840613B, 公开日期: 2018-10-12,
Inventors:  李豫东;  冯婕;  马林东;  文林;  周东;  郭旗
Favorite  |  View/Download:4/0  |  Submit date:2019/08/06
互补金属氧化物半导体图像传感器单粒子效应试验图像在线采集方法 专利
专利类型: 发明专利, 公开号: CN108401151A, 公开日期: 2018-08-14,
Inventors:  李豫东;  文林;  冯婕;  施炜雷;  于新;  玛丽娅·黑尼;  郭旗
Favorite  |  View/Download:1/0  |  Submit date:2019/08/06
一种基于Matlab的图像传感器RTS噪声检测分析系统 专利
专利类型: 发明专利, 公开号: CN104853117B, 公开日期: 2018-03-20,
Inventors:  郭旗;  王帆;  李豫东;  汪波;  张兴尧;  何承发;  文林;  陆妩;  施炜雷;  孙静;  李小龙;  余德昭;  武大猷;  玛利亚·黑尼
Favorite  |  View/Download:6/0  |  Submit date:2019/08/08
Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 4, 页码: 1-4
Authors:  Zhou, D (Zhou, Dong);  Wu, LC (Wu, Liangcai);  Wen, L (Wen, Lin);  Ma, LY (Ma, Liya);  Zhang, XY (Zhang, Xingyao);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Song, ZT (Song, Zhitang)
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Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2018/08/14