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The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1450Kb)  |  Favorite  |  View/Download:41/0  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
前驱体反应物浓度对NTC纳米粉体及其热敏电阻特性的影响 会议论文
, 中国北京·秦皇岛, 2004-09
Authors:  庄建文;  常爱民;  程家骐;  庄顺昌;  贾真;  柳培立
Adobe PDF(362Kb)  |  Favorite  |  View/Download:143/3  |  Submit date:2013/04/09
前驱体浓度  Ntc  纳米粉体  热敏电阻