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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
Adobe PDF(243Kb)  |  Favorite  |  View/Download:23/0  |  Submit date:2018/01/19
An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
Adobe PDF(386Kb)  |  Favorite  |  View/Download:93/2  |  Submit date:2017/06/20
Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui);  Wang, X (Wang, Xin)[ 2 ];  Li, P (Li, Pei);  Liu, M (Liu, Mohan)
Adobe PDF(1341Kb)  |  Favorite  |  View/Download:94/0  |  Submit date:2016/12/12
Bias Conditions  Co-60 Gamma Irradiation  Sige Hbt  Total Ionizing Dose Effect  
不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 24, 页码: 446-453
Authors:  张晋新;  贺朝会;  郭红霞;  唐杜;  熊涔;  李培;  王信
Adobe PDF(903Kb)  |  Favorite  |  View/Download:126/0  |  Submit date:2015/09/10
锗硅异质结双极晶体管  不同偏置  单粒子效应  三维数值仿真