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铽掺杂磷酸钙钠玻璃陶瓷光激励发光材料及其制备方法 专利
专利类型: 发明专利, 公开号: CN109437571A, 公开日期: 2019-03-08,
Inventors:  陈朝阳;  徐杰;  范艳伟;  阙慧颖;  何承发
Favorite  |  View/Download:6/0  |  Submit date:2019/08/06
铈掺杂磷酸锂钠光致发光剂量片的制备方法 专利
专利类型: 发明专利, 公开号: CN108728093A, 公开日期: 2018-11-02,
Inventors:  陈朝阳;  阙慧颖;  范艳伟;  孔熙瑞;  何承发
Favorite  |  View/Download:5/0  |  Submit date:2019/08/06
Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
Adobe PDF(1371Kb)  |  Favorite  |  View/Download:60/0  |  Submit date:2018/06/20
Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
Adobe PDF(2362Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2017/12/11
Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 24, 页码: 446-453
Authors:  张晋新;  贺朝会;  郭红霞;  唐杜;  熊涔;  李培;  王信
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锗硅异质结双极晶体管  不同偏置  单粒子效应  三维数值仿真  
Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 24
Authors:  Zhang, JX (Zhang Jin-Xin);  He, CH (He Chao-Hui);  Guo, HX (Guo Hong-Xia);  Tang, D (Tang Du);  Xiong, C (Xiong Cen);  Li, P (Li Pei);  Wang, X (Wang Xin)
Adobe PDF(903Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2018/02/01
Sige Heterojunction Bipolar Transistor  Different Bias  Single Event Effect  3d Numerical Simulation