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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
锗硅异质结双极晶体管单粒子效应加固设计与仿真 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 415-421
Authors:  李培;  郭红霞;  郭旗;  文林;  崔江维;  王信;  张晋新
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锗硅异质结双极晶体管  单粒子效应  加固设计  伪集电极  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
Adobe PDF(1156Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2017/09/14
Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment  
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei);  Wang, X (Wang Xin);  Zhang, JX (Zhang Jin-Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Hardening Design  Dummy Collector  
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Wei, Y (Wei Ying)
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不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 24, 页码: 446-453
Authors:  张晋新;  贺朝会;  郭红霞;  唐杜;  熊涔;  李培;  王信
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锗硅异质结双极晶体管  不同偏置  单粒子效应  三维数值仿真  
电子束辐照效应模拟试验平台及其应用 成果
新疆维吾尔自治区科学技术进步奖, 2014
Accomplishers:  郭红霞;  郭旗;  陈伟;  何承发;  罗尹虹;  陆妩;  张凤祁;  文林;  赵雯;  余学峰;  孙静;  吕小龙
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累积剂量影响静态随机存储器单粒子效应敏感性研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 1, 页码: 387-392
Authors:  肖尧;  郭红霞;  张凤祁;  赵雯;  王燕萍;  丁李利;  范雪;  罗尹虹;  张科营
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累积剂量  单粒子效应  静态随机存储器  反印记效应