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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
一种电子加速器及实现电子束低注量环境的方法 专利
专利类型: 发明专利, 公开号: CN103983874B, 公开日期: 2017-08-25,
Inventors:  郭旗;  何承发;  郭红霞;  陈伟;  文林;  孙静;  赵雯
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An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
锗硅异质结双极晶体管单粒子效应加固设计与仿真 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 415-421
Authors:  李培;  郭红霞;  郭旗;  文林;  崔江维;  王信;  张晋新
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锗硅异质结双极晶体管  单粒子效应  加固设计  伪集电极  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment  
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei);  Wang, X (Wang Xin);  Zhang, JX (Zhang Jin-Xin)
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Hardening Design  Dummy Collector  
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2015, 卷号: 32, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Wei, Y (Wei Ying)
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基于仿真的锗硅异质结双极晶体管抗单粒子效应加固方法 专利
专利类型: 发明专利, 公开号: CN104133974A, 公开日期: 2014-11-05,
Inventors:  郭红霞;  郭旗;  李培;  文林;  王信;  刘默寒;  崔江维;  陆妩;  余学峰;  何承发
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一种提高器件抗电离辐射总剂量效应的方法 专利
专利类型: 发明专利, 公开号: CN103996673A, 公开日期: 2014-08-20,
Inventors:  郭红霞;  陈伟;  郭旗;  何承发;  罗尹虹;  文林;  王玲;  张凤祁;  赵雯;  肖尧
Favorite  |  View/Download:3/0  |  Submit date:2019/08/09