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Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
Authors:  Yao, S (Yao, Shuai)[ 1,2,3 ];  Lu, W (Lu, Wu)[ 1,2,4 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Li, XL (Li, Xiaolong)[ 1,2,3 ];  Liu, MH (Liu, Mohan)[ 1,2,3 ];  Sun, J (Sun, Jing)[ 1,2 ];  Wei, XY (Wei, XinYu)[ 1,2 ];  Chang, YD (Chang, YaoDong)[ 1,2 ];  Guo, Q (Guo, Qi)[ 1,2 ];  He, CF (He, ChengFa)[ 1,2 ]
Adobe PDF(1850Kb)  |  Favorite  |  View/Download:59/0  |  Submit date:2019/02/25
Enhanced low dose rate sensitivity  single event transient  bipolar voltage comparator  synergistic effect  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Using temperature-switching approach to evaluate the ELDRS of bipolar devices 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
Authors:  Li, XL (Li, Xiaolong);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  Yu, X (Yu, Xin);  He, CF (He, Chengfa);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mohan);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xinyu)查看 ResearcherID 和 ORCID
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Bipolar Technology  Co-60 Gamma Irradiation  Enhanced Low-dose Rate Sensitivity (Eldrs)  Temperature-switching Approach (Tsa)  
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  Li, XL (Li Xiao-Long)[ 1,2,3 ];  Lu, W (Lu Wu)[ 1,2 ];  Wang, X (Wang Xin)[ 1,2,3 ];  Guo, Q (Guo Qi)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1,2 ];  Sun, J (Sun Jing)[ 1,2 ];  Yu, X (Yu Xin)[ 1,2 ];  Liu, MH (Liu Mo-Han)[ 1,2,3 ];  Jia, JC (Jia Jin-Cheng)[ 1,2,3 ];  Yao, S (Yao Shuai)[ 1,2,3 ];  Wei, XY (Wei Xin-Yu)[ 1,2,3 ]
Adobe PDF(531Kb)  |  Favorite  |  View/Download:42/0  |  Submit date:2018/09/27
Bipolar Circuit  Enhanced Low-dose-rate Sensitivity  Accelerated Evaluation Method  
An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
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Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6
Authors:  Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Cui Jiang-Wei;  Lan Bo;  Li Ming;  Wang Yi-Yuan;  Yu, XF
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P-type Metal-oxide-semiconductor Field-effect Transistor  Co-60 Gamma-ray  Total-dose Irradiation Damage Effects  Enhanced Low Dose Rate Sensitivity