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电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响 期刊论文
物理学报, 2015, 卷号: 64, 期号: 7, 页码: 393-398
Authors:  刘远;  陈海波;  何玉娟;  王信;  岳龙;  恩云飞;  刘默寒
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绝缘体上硅  部分耗尽  电离辐射  低频噪声  
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei);  Li, B (Li Bin);  Lu, YD (Lu Yu-Dong)
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SilicOn On Insulator  Ion implantatIon  Ionizing Radiation  Low Frequency Noise  
Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 7
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  He, YJ (He Yu-Juan);  Wang, X (Wang Xin);  Yue, L (Yue Long);  En, YF (En Yun-Fei);  Liu, MH (Liu Mo-Han)
Adobe PDF(507Kb)  |  Favorite  |  View/Download:22/0  |  Submit date:2018/01/26
SilicOn On Insulator  Partially Depleted  Ionizing Radiation  Low Frequency Noise