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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
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Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure