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辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
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双极线性稳压器  辐射效应  辐照温度  
3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 4, 页码: 60-65
Authors:  Jinxin, Zhang;  Hongxia, Guo;  Lin, Wen;  Qi, Guo;  Jiangwei, Cui;  Xin, Wang;  Wei, Deng;  Qiwen, Zhen;  Xue, Fan;  Yao, Xiao;  Hongxia, G.
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变温恒剂量率辐照加速评估方法在双极线性稳压器 LM317上的应用 期刊论文
原子能科学技术, 2014, 卷号: 48, 期号: 4, 页码: 727-733
Authors:  邓伟;  陆妩;  郭旗;  何承发;  吴雪;  王信;  张晋新;  张孝富;  郑齐文;  马武英
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双极线性稳压器  低剂量率损伤增强效应  ~(60)Cogamma辐照  变温恒剂量率辐照  加速评估方法  
双极电压比较器低剂量率辐照损伤增强效应的变温辐照加速评估方法 期刊论文
原子能科学技术, 2014, 卷号: 48, 期号: 11, 页码: 2170-2176
Authors:  马武英;  陆妩;  郭旗;  吴雪;  孙静;  邓伟;  王信;  吴正新
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双极电压比较器  60 Coγ辐照  低剂量率  变温辐照  
线性稳压器的辐射效应及加速评估方法的研究 学位论文
硕士, 北京: 中国科学院大学, 2013
Authors:  邓伟
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线性稳压器  低剂量率损伤增强效应加速评估方法线性稳压器  低剂量率损伤增强效应加速评估方法60 Co γ 辐照  
60Coγ射线对高铝组分Al0.5Ga0.5N基p-i-n日盲型光探测器理想因子的影响 期刊论文
物理学报, 2013, 卷号: 62, 期号: 7, 页码: 331-336
Authors:  张孝富;  李豫东;  郭旗;  罗木昌;  何承发;  于新;  申志辉;  张兴尧;  邓伟;  吴正新
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高铝组分alxga1-xn  Γ射线辐射效应  理想因子  欧姆接触  
Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 57-63
Authors:  Wang, Xin;  Lu, Wu;  Guo, Qi;  Wu, Xue;  Xi, Shanbin;  Deng, Wei;  Cui, Jiangwei;  Zhang, Jinxin
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12位LC~2MOS工艺数模转换器总剂量电离辐射效应 期刊论文
原子能科学技术, 2013, 卷号: 47, 期号: 12, 页码: 2355-2360
Authors:  王信;  陆妩;  郭旗;  吴雪;  席善斌;  邓伟;  崔江维;  张晋新
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电离辐射  数模转换器  剂量率效应  
co-60 gamma-radiation effects on the ideality factor of alxga1-xn p-i-n solar-blind detector with high content of aluminum 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 7, 页码: 331-336
Authors:  Zhang Xiao-Fu;  Li Yu-Dong;  Guo Qi;  Luo Mu-Chang;  He Cheng-Fa;  Yu Xin;  Shen Zhi-Hui;  Zhang Xing-Yao;  Deng Wei;  Wu Zheng-Xin
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High Al Content Alxga1-xn  Gamma-ray Radiation Effects  Ideality Factor  Ohmic Contact  
3d simulation of heavy ion induced charge collection of single event effects in sige heteroj unction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 4
Authors:  Zhang Jin-Xin;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei;  Xi Shan-Bin;  Wang Xin;  Deng Wei
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Sige Heterojunction Bipolar Transistor  Single Event Effect  Charge Collection  Three-dimensional Numerical Simulation