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Order-Disorder Transition of Carboxyl Terminated Chains in Polydiacetylenes Vesicles Probed by Second Harmonic Generation and Two-Photon Fluorescence 期刊论文
CHINESE JOURNAL OF CHEMICAL PHYSICS, 2018, 卷号: 31, 期号: 3, 页码: 269-276
Authors:  Chen, SL (Chen, Shun-li);  Zhu, XF (Zhu, Xue-feng);  Yang, FY (Yang, Fang-yuan);  Pan, XC (Pan, Xue-cong);  Gan, W (Gan, Wei);  Yuan, QH (Yuan, Qun-hui)
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Polydiacetylenes Vesicle  Polymerization  Interfacial Adsorption  Second Harmonic Generation  Order-disorder Transition  
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 4, 页码: 1-4
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Wei, Y (Wei, Ying);  Yu, XF (Yu, Xue-Feng);  Lu, W (Lu, Wu);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi)
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Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 8, 页码: 1-4
Authors:  Yu, X (Yu, Xin)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Yao, S (Yao, Shuai)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Sun, J (Sun, Jing)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Liu, MH (Liu, Mo-Han)[ 1,2 ];  Li, XL (Li, Xiao-Long)[ 1,2,3 ]
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Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
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Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
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Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency  
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
Authors:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Liu, Y (Liu, Yuan);  Zeng, JZ (Zeng, Junzhe);  Zhang, X (Zhang, Xiang);  Wang, TH (Wang, Tianhui)
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Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency  
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
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Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin