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3MeV质子辐照下背照式CMOS图像传感器固定模式噪声的退化行为 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 50-53
Authors:  张翔;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  蔡毓龙;  王志铭
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背照式CMOS图像传感器  3MeV质子  固定模式噪声  位移效应  电离总剂量效应  
γ辐照下4T CMOS有源像素传感器的满阱容量退化机理 期刊论文
现代应用物理, 2019, 卷号: 10, 期号: 1, 页码: 64-68
Authors:  蔡毓龙;  李豫东;  郭旗;  文林;  周东;  冯婕;  马林东;  张翔
Adobe PDF(326Kb)  |  Favorite  |  View/Download:21/0  |  Submit date:2019/05/09
图像传感器  CMOS  满阱容量  电离总剂量效应  
Heavy ion-induced single event effects in active pixel sensor array 期刊论文
SOLID-STATE ELECTRONICS, 2019, 卷号: 152, 期号: 2, 页码: 93-99
Authors:  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ]
Adobe PDF(1340Kb)  |  Favorite  |  View/Download:86/1  |  Submit date:2019/01/03
CMOS active pixel sensor (APS)  SEE  Heavy ion  
Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
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Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
Adobe PDF(567Kb)  |  Favorite  |  View/Download:39/0  |  Submit date:2018/11/20
Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency