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Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
Adobe PDF(951Kb)  |  Favorite  |  View/Download:74/1  |  Submit date:2016/12/12
Sige Hbts  Tid  Eldrs  Annealing  
Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors 期刊论文
CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 2, 页码: 169-173
Authors:  Lu Wu;  Zheng Yu-Zhan;  Wang Yi-Yuan;  Ren Di-Yuan;  Guo Qi;  Wang Zhi-Kuan;  Wang Jian-An
Adobe PDF(1297Kb)  |  Favorite  |  View/Download:180/5  |  Submit date:2012/11/29
Npn Bipolar Junction Transistors  (60)Co-gamma Irradiation  Eldrs  Orientation Of Substrate  
ELDRS and dose-rate dependence of vertical NPN transistor 期刊论文
CHINESE PHYSICS C, 2009, 卷号: 33, 期号: 1, 页码: 47-49
Authors:  Zheng Yu-Zhan;  Lu Wu;  Ren Di-Yuan;  Wang Gai-Li;  Yu Xue-Feng;  Guo Qi
Adobe PDF(1232Kb)  |  Favorite  |  View/Download:201/16  |  Submit date:2012/11/29
Bipolar Junction Transistor  Eldrs Effect  Dose-rate Dependence  
A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence 期刊论文
CHINESE PHYSICS C, 2008, 卷号: 32, 期号: 5, 页码: 381-384
Authors:  Liu Yan-Ping;  Chen Zhao-Yang;  Ba Wei-Zhen;  Fan Yan-Wei;  Du Yan-Zhao;  Pan Shi-Lie;  Guo Qi
Adobe PDF(409Kb)  |  Favorite  |  View/Download:147/0  |  Submit date:2014/11/11
Optically Stimulated Luminescence  Online And Realtime  Dosimeter