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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
Adobe PDF(950Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/05/14
Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
Adobe PDF(1496Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/11/20
Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
Adobe PDF(567Kb)  |  Favorite  |  View/Download:43/0  |  Submit date:2018/11/20
Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency  
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
Authors:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Liu, Y (Liu, Yuan);  Zeng, JZ (Zeng, Junzhe);  Zhang, X (Zhang, Xiang);  Wang, TH (Wang, Tianhui)
Adobe PDF(705Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency  
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9, 页码: 1-5
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Liu, MX (Liu, Mengxin);  Su, DD (Su, Dandan);  Zhou, H (Zhou, Hang);  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  Guo, Q (Guo, Qi);  Zhao, FZ (Zhao, Fazhan)
Adobe PDF(496Kb)  |  Favorite  |  View/Download:45/0  |  Submit date:2017/12/05
Silicon-on-insulator  Total Ionizing Dose  Static Random Access Memory  Static Noise Margin  
Generation of femtosecond laser pulses at 263 nm by K3B6O10Cl crystal 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 6
Authors:  Zhang, NH (Zhang, Ning-Hua);  Fang, SB (Fang, Shao-Bo);  He, P (He, Peng);  Huang, HD (Huang, Hang-Dong);  Zhu, JF (Zhu, Jiang-Feng);  Tian, WL (Tian, Wen-Long);  Wu, HP (Wu, Hong-Ping);  Pan, SL (Pan, Shi-Lie);  Teng, H (Teng, Hao);  Wei, ZY (Wei, Zhi-Yi)
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Nonlinear Optical Crystal  Kboc  Third Harmonic Generation  Femtosecond Ultraviolet  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
Adobe PDF(2362Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2017/12/11
Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
Generation of femtosecond laser pulses at 396 nm in K3B6O10Cl crystal 期刊论文
CHINESE PHYSICS B, 2016, 卷号: 25, 期号: 12, 页码: 1-4
Authors:  Zhang, NH (Zhang, Ning-Hua);  Teng, H (Teng, Hao);  Huang, HD (Huang, Hang-Dong);  Tian, WL (Tian, Wen-Long);  Zhu, JF (Zhu, Jiang-Feng);  Wu, HP (Wu, Hong-Ping);  Pan, SL (Pan, Shi-Lie);  Fang, SB (Fang, Shao-Bo);  Wei, ZY (Wei, Zhi-Yi)
Adobe PDF(491Kb)  |  Favorite  |  View/Download:94/1  |  Submit date:2017/02/14
Nonlinear Optics  Nonlinear Optical Crystal  Second Harmonic Generation  
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei);  Li, B (Li Bin);  Lu, YD (Lu Yu-Dong)
Adobe PDF(574Kb)  |  Favorite  |  View/Download:26/0  |  Submit date:2018/01/25
SilicOn On Insulator  Ion implantatIon  Ionizing Radiation  Low Frequency Noise  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
Adobe PDF(1156Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2017/09/14
Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment