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Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
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Sige Hbts  Tid  Eldrs  Annealing  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
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Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
The role of annealing temperature in enhancing the photocatalytic activity of nitrogen-doped hexaniobate 期刊论文
Materials Science in Semiconductor Processing, 2014, 卷号: 25, 期号: 9, 页码: 294-300
Authors:  Liu, Huayun;  Wang, Huanhuan;  Li, Shouzhu
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Annealing Temperature  Charge Recombination  Crystallinity  Nitrogen-doped Hexaniobate  Photocatalytic Activity  
serial ferroelectric memory ionizing radiation effects and annealing characteristics 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 15, 页码: 347-352
Authors:  Zhang Xing-Yao;  Guo Qi;  Lu Wu;  Zhang Xiao-Fu;  Zheng Qi-Wen;  Cui Jiang-Wei;  Li Yu-Dong;  Zhou Dong
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Ferroelectric Random Memory  Ionizing Radiation Effects  Annealing Characteristics  
Annealing behavior of radiation damage in JFET-input operational amplifiers 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 5, 页码: 60-64
Authors:  Zheng, Yuzhan;  Lu, Wu;  Ren, Diyuan;  Wang, Yiyuan;  Guo, Qi;  Yu, Xuefeng
Adobe PDF(147Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2014/11/11
Jfet-input Operational Amplifiers  Dose Rate  Radiation Damage  Annealing Behavior