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CMOS有源像素图像传感器的电子辐照损伤效应研究 期刊论文
发光学报, 2017, 卷号: 38, 期号: 2, 页码: 182-187
Authors:  玛丽娅;  李豫东;  郭旗;  刘昌举;  文林;  汪波
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电子辐照  Cmos有源像素传感器  暗信号  
3T和4T-CMOS图像传感器空间辐射效应及损伤机理研究 学位论文
, 北京: 中国科学院大学, 2016
Authors:  汪波
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Cmos图像传感器  钳位光电二极管  电离总剂量效应  位移损伤效应  抗辐射加固  
Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa)
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Complementary Metal Oxide Semiconductor Image Sensor  Total Ionizing Dose Radiation Effect  Pinned Photodiode  Full Well Chargecapacity  
电荷耦合器件中子辐照诱发的位移效应 期刊论文
发光学报, 2016, 卷号: 37, 期号: 1, 页码: 44-49
Authors:  汪波;  李豫东;  郭旗;  汪朝敏;  文林
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电荷耦合器件  中子辐照  位移效应  电荷转移效率  暗信号  
基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究 期刊论文
物理学报, 2016, 卷号: 65, 期号: 2, 页码: 180-185
Authors:  王帆;  李豫东;  郭旗;  汪波;  张兴尧;  文林;  何承发
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互补金属氧化物半导体图像传感器  电离总剂量效应  钳位二极管  满阱容量  
温度对4管像素结构CMOS图像传感器性能参数的影响 期刊论文
发光学报, 2016, 卷号: 37, 期号: 3, 页码: 332-337
Authors:  王帆;  李豫东;  郭旗;  汪波;  张兴尧
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Cmos图像传感器  转换增益  满阱容量  暗电流  温度  
电荷耦合器件的γ辐照剂量率效应研究 期刊论文
发光学报, 2016, 卷号: 37, 期号: 6, 页码: 711-719
Authors:  武大猷;  文林;  汪朝敏;  何承发;  郭旗;  李豫东;  曾俊哲;  汪波;  刘元
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电荷耦合器件  暗信号  低剂量率损伤增强效应  暗场像素统计  
Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 15, 页码: 252-258
Authors:  Ma, LY (Ma Li-Ya);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Ai, EK (Ai Er-Ken);  Wang, HJ (Wang Hai-Jiao);  Wang, B (Wang Bo);  Zeng, JZ (Zeng Jun-Zhe)
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In0.53ga0.47as/inp  Quantum Well  Electron Beam Irradiation  Photoluminescence  
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199
Authors:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin);  Ren, DY (Ren Di-Yuan);  Zeng, JZ (Zeng Jun-Zhe);  Ma, LY (Ma Li-Ya)
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Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect  
0.5μm工艺CMOS有源像素传感器的总剂量辐射效应 期刊论文
发光学报, 2015, 卷号: 36, 期号: 2, 页码: 242-248
Authors:  汪波;  李豫东;  郭旗;  刘昌举;  文林;  孙静;  玛丽娅
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电离总剂量辐射效应  Cmos有源像素传感器  饱和输出信号  像素单元结构  Locos隔离