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Investigation of enhanced low dose rate sensitivity in SiGe HBTs by Co-60 gamma irradiation under different biases 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 84, 期号: 5, 页码: 105-111
Authors:  Zhang, JX (Zhang, Jin-xin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hong-xia);  Lu, W (Lu, Wu);  He, CH (He, Chao-hui);  Wang, X (Wang, Xin);  Li, P (Li, Pei);  Wen, L (Wen, Lin)
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Eldrs  Sige Hbt  Gamma Irradiation  Bias Conditions  
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
Adobe PDF(386Kb)  |  Favorite  |  View/Download:97/2  |  Submit date:2017/06/20
Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
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Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui);  Wang, X (Wang, Xin)[ 2 ];  Li, P (Li, Pei);  Liu, M (Liu, Mohan)
Adobe PDF(1341Kb)  |  Favorite  |  View/Download:97/0  |  Submit date:2016/12/12
Bias Conditions  Co-60 Gamma Irradiation  Sige Hbt  Total Ionizing Dose Effect  
六甲基二硅氧烷的合成研究 期刊论文
化工新型材料, 2016, 卷号: 44, 期号: 3, 页码: 132-134
Authors:  李培;  王旭;  高林
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六甲基二硅氧烷  三甲基氯硅烷    氢氧化钠  
SiGe HBT单粒子效应敏感区域分布与加固设计研究 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  李培
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不同结构sige Hbt  单粒子效应  三维数值模拟仿真  激光微束试验  伪集电极加固  
有机硅对称分子的制备与应用研究 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  李培
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有机硅单体  三甲基氯硅烷  二甲基一氯硅烷  六甲基二硅氧烷  六甲基二硅氮烷  四(二甲基硅氧基)硅烷  
锗硅异质结双极晶体管单粒子效应加固设计与仿真 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 415-421
Authors:  李培;  郭红霞;  郭旗;  文林;  崔江维;  王信;  张晋新
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锗硅异质结双极晶体管  单粒子效应  加固设计  伪集电极  
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
Authors:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao);  Wei, Y (Wei Ying);  Cui, JW (Cui Jiang-Wei);  Wen, L (Wen Lin);  Liu, MH (Liu Mo-Han);  Wang, X (Wang Xin)
Adobe PDF(1156Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2017/09/14
Sige Heterojunction Bipolar Transistor  Single Event Effect  Three-dimensional Numerical Simulation  Laser Microbeam Experiment