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Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor 期刊论文
Science China-Information Sciences, 2017, 卷号: 60, 期号: 12, 页码: 1-3
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, HX (Guo, Hongxia);  Zhang, FQ (Zhang, Fengqi);  He, CH (He, Chaohui);  Li, P (Li, Pei);  Yan, YY (Yan, Yunyi);  Wang, H (Wang, Hui);  Zhang, LX (Zhang, Linxia)
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An Investigation of ELDRS in Different SiGe Processes 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 卷号: 64, 期号: 5, 页码: 1137-1141
Authors:  Li, P (Li, Pei);  He, CH (He, Chaohui);  Guo, HX (Guo, Hongxia);  Guo, Q (Guo, Qi);  Zhang, JX (Zhang, Jinxin);  Liu, MH (Liu, Mohan)
Adobe PDF(386Kb)  |  Favorite  |  View/Download:97/2  |  Submit date:2017/06/20
Different Silicon-germanium (Sige) Process  Emitter-base (Eb)-spacer Geometry  Enhanced Low Dose Rate Sensitivity (Eldrs)  Isolation Structure  
Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258
Authors:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui);  Wang, X (Wang, Xin)[ 2 ];  Li, P (Li, Pei);  Liu, M (Liu, Mohan)
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Bias Conditions  Co-60 Gamma Irradiation  Sige Hbt  Total Ionizing Dose Effect  
锗硅异质结双极晶体管单粒子效应加固设计与仿真 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 415-421
Authors:  李培;  郭红霞;  郭旗;  文林;  崔江维;  王信;  张晋新
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锗硅异质结双极晶体管  单粒子效应  加固设计  伪集电极  
基于仿真的锗硅异质结双极晶体管单粒子效应检测方法 专利
专利类型: 发明专利, 公开号: CN103645430A, 公开日期: 2014-03-19,
Inventors:  郭红霞;  郭旗;  张晋新;  文林;  陆妩;  余学峰;  何承发;  崔江维;  孙静;  席善斌;  邓伟;  王信
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不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 24, 页码: 446-453
Authors:  张晋新;  贺朝会;  郭红霞;  唐杜;  熊涔;  李培;  王信
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锗硅异质结双极晶体管  不同偏置  单粒子效应  三维数值仿真  
变温恒剂量率辐照加速评估方法在双极线性稳压器 LM317上的应用 期刊论文
原子能科学技术, 2014, 卷号: 48, 期号: 4, 页码: 727-733
Authors:  邓伟;  陆妩;  郭旗;  何承发;  吴雪;  王信;  张晋新;  张孝富;  郑齐文;  马武英
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双极线性稳压器  低剂量率损伤增强效应  ~(60)Cogamma辐照  变温恒剂量率辐照  加速评估方法  
SiGe HBT单粒子效应损伤机理研究 学位论文
硕士, 北京: 中国科学院大学, 2013
Authors:  张晋新
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锗硅异质结双极晶体管  单粒子效应  三维数值仿真  激光微束试验  电荷收集  敏感区域定位  
Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 57-63
Authors:  Wang, Xin;  Lu, Wu;  Guo, Qi;  Wu, Xue;  Xi, Shanbin;  Deng, Wei;  Cui, Jiangwei;  Zhang, Jinxin
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12位LC~2MOS工艺数模转换器总剂量电离辐射效应 期刊论文
原子能科学技术, 2013, 卷号: 47, 期号: 12, 页码: 2355-2360
Authors:  王信;  陆妩;  郭旗;  吴雪;  席善斌;  邓伟;  崔江维;  张晋新
Adobe PDF(299Kb)  |  Favorite  |  View/Download:197/0  |  Submit date:2014/11/11
电离辐射  数模转换器  剂量率效应