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Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
Adobe PDF(951Kb)  |  Favorite  |  View/Download:78/1  |  Submit date:2016/12/12
Sige Hbts  Tid  Eldrs  Annealing  
典型运放、比较器的电离与位移辐射损伤效应 学位论文
硕士, 北京: 中国科学院大学, 2015
Authors:  姜柯
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60coγ辐照源  质子辐射  电子辐射  中子辐射  双极器件  辐射效应  
偏置条件对NPN型锗硅异质结双极晶体管电离辐射效应的影响 期刊论文
核技术, 2015, 卷号: 38, 期号: 6, 页码: 38-44
Authors:  刘默寒;  陆妩;  马武英;  王信;  郭旗;  何承发;  姜柯
Adobe PDF(1646Kb)  |  Favorite  |  View/Download:128/0  |  Submit date:2015/09/10
锗硅异质结双极晶体管  总剂量效应  偏置条件  退火  
电子辐射环境中NPN输入双极运算放大器的辐射效应和退火特性 期刊论文
物理学报, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  姜柯;  陆妩;  胡天乐;  王信;  郭旗;  何承发;  刘默涵;  李小龙
Adobe PDF(844Kb)  |  Favorite  |  View/Download:119/0  |  Submit date:2015/09/09
Npn输入双极运算放大器  电子辐射  辐射效应  退火  
质子辐射环境下PNP输入双极运算放大器辐照效应与退火特性 期刊论文
原子能科学技术, 2015, 卷号: 49, 期号: 11, 页码: 2087-2092
Authors:  姜柯;  陆妩;  马武英;  郭旗;  何承发;  王信;  曾俊哲;  刘默涵
Adobe PDF(263Kb)  |  Favorite  |  View/Download:115/0  |  Submit date:2016/06/07
Pnp输入双极运算放大器  质子辐射  60 Coγ射线辐射  辐射效应  
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
Authors:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi);  He, CF (He Cheng-Fa);  Liu, MH (Liu Mo-Han);  Li, XL (Li Xiao-Long)
Adobe PDF(362Kb)  |  Favorite  |  View/Download:27/0  |  Submit date:2018/01/25
Npn-input Bipolar Operational Amplifier  Electron Radiation  Radiation Effect  Annealing  
深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 22, 页码: 262-269
Authors:  王信;  陆妩;  吴雪;  马武英;  崔江维;  刘默寒;  姜柯
Adobe PDF(751Kb)  |  Favorite  |  View/Download:160/0  |  Submit date:2017/10/13
总剂量效应  N沟道金属氧化物场效应晶体管  寄生双极晶体管  Bandgap基准电压源  
栅控横向PNP双极晶体管基极电流峰值展宽效应及电荷分离研究 期刊论文
物理学报, 2014, 卷号: 63, 期号: 11, 页码: 226-231
Authors:  马武英;  王志宽;  陆妩;  席善斌;  郭旗;  何承发;  王信;  刘默寒;  姜柯
Adobe PDF(574Kb)  |  Favorite  |  View/Download:176/1  |  Submit date:2014/11/11
栅控双极pnp晶体管  60 Coγ辐照  辐射损伤  Gclpnp Bjts  60coγ Irradiation  Ionizing Damage  
Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 22
Authors:  Wang, X (Wang Xin);  Lu, W (Lu Wu);  Wu, X (Wu Xue);  Ma, WY (Ma Wu-Ying);  Cui, JW (Cui Jiang-Wei);  Liu, MH (Liu Mo-Han);  Jiang, K (Jiang Ke)
Adobe PDF(481Kb)  |  Favorite  |  View/Download:18/0  |  Submit date:2018/02/01
Total Dose Radiation  Nmosfet  Parasitic Transistor  Bandgap Voltage Reference