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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1909Kb)  |  Favorite  |  View/Download:36/0  |  Submit date:2019/05/14
Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 专利
专利类型: 发明专利, 公开号: CN108037438A, 公开日期: 2018-05-15,
Inventors:  崔江维;  郑齐文;  魏莹;  孙静;  余学峰;  郭旗;  陆妩;  何承发;  任迪远
Favorite  |  View/Download:6/0  |  Submit date:2019/08/06
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
Authors:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa);  Ma, T (Ma, Teng);  Zhao, JH (Zhao, Jinghao);  Ren, DY (Ren, Diyuan);  Guo, Q (Guo, Qi);  Zheng, QW
Adobe PDF(1382Kb)  |  Favorite  |  View/Download:34/0  |  Submit date:2018/05/15
Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
Adobe PDF(1450Kb)  |  Favorite  |  View/Download:54/1  |  Submit date:2018/09/27
Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
一种基于SOI结构的电离总剂量探测系统及方法 专利
专利类型: 发明专利, 公开号: CN106802427A, 公开日期: 2017-06-06,
Inventors:  孙静;  郭旗;  施炜雷;  于新;  何承发;  余学峰;  陆妩
Favorite  |  View/Download:3/0  |  Submit date:2019/08/07
一种用于光电材料光致发光谱辐射损伤的测试方法 专利
专利类型: 发明专利, 公开号: CN106370629A, 公开日期: 2017-02-01,
Inventors:  郭旗;  玛丽娅·黑尼;  艾尔肯·阿不都瓦衣提;  李豫东;  文林;  周东;  张兴尧;  陆妩;  余学峰;  何承发
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辐照温度对双极线性稳压器的辐射效应影响 期刊论文
核技术, 2016, 卷号: 39, 期号: 2, 页码: 31-36
Authors:  孙静;  陆妩;  邓伟;  郭旗;  余学峰;  何承发
Adobe PDF(1075Kb)  |  Favorite  |  View/Download:128/1  |  Submit date:2016/06/02
双极线性稳压器  辐射效应  辐照温度  
星用双极器件及模拟电路的低剂量率辐射损伤增强效应研究 成果
新疆维吾尔自治区科学技术进步奖, 2015
Accomplishers:  陆妩;  任迪远;  郭旗;  余学峰;  何承发;  文林;  孙静;  李豫东;  崔江维;  吕小龙;  胡江生;  王嘉
Favorite  |  View/Download:36/0  |  Submit date:2017/08/08
基于仿真的锗硅异质结双极晶体管抗单粒子效应加固方法 专利
专利类型: 发明专利, 公开号: CN104133974A, 公开日期: 2014-11-05,
Inventors:  郭红霞;  郭旗;  李培;  文林;  王信;  刘默寒;  崔江维;  陆妩;  余学峰;  何承发
Favorite  |  View/Download:5/0  |  Submit date:2019/08/09
基于仿真的锗硅异质结双极晶体管单粒子效应检测方法 专利
专利类型: 发明专利, 公开号: CN103645430A, 公开日期: 2014-03-19,
Inventors:  郭红霞;  郭旗;  张晋新;  文林;  陆妩;  余学峰;  何承发;  崔江维;  孙静;  席善斌;  邓伟;  王信
Favorite  |  View/Download:5/0  |  Submit date:2019/08/10