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一种使用变温光致发光谱测试分析太阳电池辐射效应的方法 专利
专利类型: 发明专利, 公开号: CN109459418A, 公开日期: 2019-03-12,
Inventors:  艾尔肯·阿不都瓦衣提;  慎小宝;  玛丽娅·黑尼;  赵晓凡;  莫敏·赛来;  许焱;  雷琪琪;  李豫东;  郭旗
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一种低温光致发光快速高效测试方法 专利
专利类型: 发明专利, 公开号: CN109238969A, 公开日期: 2019-01-18,
Inventors:  艾尔肯·阿不都瓦衣提;  赵晓凡;  玛丽娅·黑尼;  莫敏·塞来;  慎小宝;  许焱;  雷琪琪;  李豫东;  郭旗
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一种光致发光测试中避免激发激光谐波影响的方法 专利
专利类型: 发明专利, 公开号: CN109187445A, 公开日期: 2019-01-11,
Inventors:  玛丽娅·黑尼;  莫敏·塞来;  艾尔肯·阿不都瓦衣提;  赵晓凡;  慎小宝;  许焱;  雷琪琪;  李豫东;  郭旗
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一种提高低温光致发光测试精度的实验方法 专利
专利类型: 发明专利, 公开号: CN109187349A, 公开日期: 2019-01-11,
Inventors:  艾尔肯·阿不都瓦衣提;  雷琪琪;  莫敏·塞来;  马丽娅·黑尼;  赵晓凡;  慎小宝;  许焱;  李豫东;  郭旗
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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ];  Shen, MJ (Shen, Mingjie)[ 3 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  He, CF (He, Chengfa)[ 1 ];  Ren, DY (Ren, Diyuan)[ 1 ];  Guo, Q (Guo, Qi)
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Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)  
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
Authors:  Xu, Y (Xu, Yan)[ 1,2 ];  Heini, M (Heini, Maliya)[ 2 ];  Shen, XB (Shen, Xiaobao)[ 2,3 ];  Aierken, A (Aierken, Abuduwayiti)[ 2,4 ];  Zhao, XF (Zhao, Xiaofan)[ 2 ];  Sailai, M (Sailai, Momin)[ 2 ];  Lu, W (Lu, Wu)[ 2 ];  Tan, M (Tan, Ming)[ 5 ];  Wu, YY (Wu, Yuanyuan)[ 5 ];  Lu, SL (Lu, Shulong)[ 5 ];  Li, YD (Li, Yudong)[ 2 ];  Guo, Q (Guo, Qi)[ 2 ]
Adobe PDF(740Kb)  |  Favorite  |  View/Download:59/1  |  Submit date:2019/03/19