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基于仿真的锗硅异质结双极晶体管抗单粒子效应加固方法 专利
专利类型: 发明专利, 公开号: CN104133974A, 公开日期: 2014-11-05,
Inventors:  郭红霞;  郭旗;  李培;  文林;  王信;  刘默寒;  崔江维;  陆妩;  余学峰;  何承发
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一种基于静态随机存储器的辐照偏置系统 专利
专利类型: 发明专利, 公开号: CN103971752A, 公开日期: 2014-08-06,
Inventors:  余学峰;  丛忠超;  郭旗;  崔江维;  郑齐文;  孙静;  周航;  汪波
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基于仿真的锗硅异质结双极晶体管单粒子效应检测方法 专利
专利类型: 发明专利, 公开号: CN103645430A, 公开日期: 2014-03-19,
Inventors:  郭红霞;  郭旗;  张晋新;  文林;  陆妩;  余学峰;  何承发;  崔江维;  孙静;  席善斌;  邓伟;  王信
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Online and offline test method of total dose radiation damage on static random access memory 期刊论文
ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 8, 页码: 329-335
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Wang, Bo;  Ma, Wu-Ying;  Ma, Li-Ya;  Zhou, Hang
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Online-test  Offline-test  Static Random Access Memory  Functional Test  
电子束辐照效应模拟试验平台及其应用 成果
新疆维吾尔自治区科学技术进步奖, 2014
Accomplishers:  郭红霞;  郭旗;  陈伟;  何承发;  罗尹虹;  陆妩;  张凤祁;  文林;  赵雯;  余学峰;  孙静;  吕小龙
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Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation 期刊论文
Chinese Physics B, 2014, 卷号: 23, 期号: 10, 页码: 366-372
Authors:  Zheng, Qi-Wen;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Guo, Qi;  Ren, Di-Yuan;  Cong, Zhong-Chao;  Zhou, Hang
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Total Dose Irradiation  Static Random Access Memory  Pattern Imprinting  Deep Sub-micron  
Thermodynamic impact on total dose effect for semiconductor components 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2014, 卷号: 35, 期号: 4, 页码: 465-469
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Zhou, Hang
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Hot-carrier effects on irradiated deep submicron NMOSFET 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 7
Authors:  Cui, Jiangwei;  Zheng, Qiwen;  Yu, Xuefeng;  Cong, Zhongchao;  Zhou, Hang;  Guo, Qi;  Wen, Lin;  Wei, Ying;  Ren, Diyuan
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1.8MeV电子辐照AlGaN基p-i-n日盲型光探测器的辐射效应研究 会议论文
, 中国甘肃兰州, 2014-08-13
Authors:  李豫东;  郭旗;  罗木昌;  张孝富;  文林;  汪波
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Algan日盲型光探测器  电子辐照  I-v特性  C-v特性  
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 12
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Zhou, H (Zhou Hang);  Ren, DY (Ren Di-Yuan);  Yu, XF
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