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γ射线辐照对130 nm部分耗尽SOI MOS器件栅氧经时击穿可靠性的影响 期刊论文
红外与激光工程, 2018, 卷号: 47, 期号: 9, 页码: 214-219
Authors:  马腾;  苏丹丹;  周航;  郑齐文;  崔江维;  魏莹;  余学峰;  郭旗
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场效应晶体管  可靠性  栅氧经时击穿  Γ射线  
Thermodynamic impact on total dose effect for semiconductor components 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2014, 卷号: 35, 期号: 4, 页码: 465-469
Authors:  Cong, Zhong-Chao;  Yu, Xue-Feng;  Cui, Jiang-Wei;  Zheng, Qi-Wen;  Guo, Qi;  Sun, Jing;  Zhou, Hang
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Hot-carrier effects on irradiated deep submicron NMOSFET 期刊论文
Journal of Semiconductors, 2014, 卷号: 35, 期号: 7
Authors:  Cui, Jiangwei;  Zheng, Qiwen;  Yu, Xuefeng;  Cong, Zhongchao;  Zhou, Hang;  Guo, Qi;  Wen, Lin;  Wei, Ying;  Ren, Diyuan
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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 7, 页码: 074008-1-074008-6
Authors:  Zheng, Qiwen;  Yu, Xuefeng;  Cui, Jiangwei;  Guo, Qi;  Cong, Zhongchao;  Zhang, Xingyao;  Deng, Wei;  Zhang, Xiaofu;  Wu, Zhengxin
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Silicon-on-insulator  Hot-carrier Effect  Hump  Back Gate  
Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 1, 页码: 64-67
Authors:  Cui, Jiangwei;  Xue, Yaoguo;  Yu, Xuefeng;  Ren, Diyuan;  Lu, Jian;  Zhang, Xingyao
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Total dose ionizing irradiation effects on a static random access memory field programmable gate array 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 3, 页码: 42-47
Authors:  Gao, Bo;  Yu, Xuefeng;  Ren, Diyuan;  Li, Yudong;  Sun, Jing;  Cui, Jiangwei;  Wang, Yiyuan;  Li, Ming
Adobe PDF(337Kb)  |  Favorite  |  View/Download:148/0  |  Submit date:2014/11/11
Double humps and radiation effects of SOI NMOSFET 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 6
Authors:  Cui, Jiangwei;  Yu, Xuefeng;  Ren, Diyuan;  He, Chengfa;  Gao, Bo;  Li, Ming;  Lu, Jian
Adobe PDF(259Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2014/11/11
Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 4, 页码: 41-45
Authors:  Gao, Bo;  Yu, Xuefeng;  Ren, Diyuan;  Liu, Gang;  Wang, Yiyuan;  Sun, Jing;  Cui, Jiangwei
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Annealing behavior of radiation damage in JFET-input operational amplifiers 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 5, 页码: 60-64
Authors:  Zheng, Yuzhan;  Lu, Wu;  Ren, Diyuan;  Wang, Yiyuan;  Guo, Qi;  Yu, Xuefeng
Adobe PDF(147Kb)  |  Favorite  |  View/Download:132/0  |  Submit date:2014/11/11
Jfet-input Operational Amplifiers  Dose Rate  Radiation Damage  Annealing Behavior  
Radiation effects of the bipolar linear circuits and devices for high and low dose rate total dose irradiations 期刊论文
Research & Progress of Solid State Electronics, 2006, 卷号: 26, 期号: 4, 页码: 471-476
Authors:  Ren Diyuan;  Lu Wu;  Yu Xuefeng;  Guo Qi;  Erkin
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