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Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
Authors:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan);  Yu, XF (Yu Xue-Feng);  Yu, XF
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Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress  
电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究 期刊论文
物理学报, 2015, 卷号: 64, 期号: 8, 页码: 250-256
Authors:  周航;  崔江维;  郑齐文;  郭旗;  任迪远;  余学峰
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可靠性  绝缘体上硅n型金属氧化物半导体场效应晶体管  总剂量效应  电应力  
Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas 期刊论文
Applied Surface Science, 2014, 卷号: 311, 期号: 8, 页码: 68-73
Authors:  Zhang, Zhonghua;  Song, Sannian;  Song, Zhitang;  Cheng, Yan;  Zhu, Min;  Li, Xiaoyun;  Zhu, Yueqin;  Guo, Xiaohui;  Yin, Weijun;  Wu, Liangcai;  Liu, Bo;  Feng, Songlin;  Zhou, Dong
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Phase Change Material  Ti-sb-te  Etching  Icp  
High tolerance of proton irradiation of Ge2Sb2Te5 phase change material 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 卷号: 575, 期号: 10, 页码: 229-232
Authors:  Zhou Dong;  Wu Liangcai;  Guo Qi;  Peng Cheng;  He Chengfa;  Song Zhitang;  Rao Feng;  Li Yudong;  Xi Shanbin
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Phase Change Material  Ge2sb2te5  Proton Irradiation  Radiation Damage  
synthesis, growth, crystal structure and optical properties of babibo4 期刊论文
INORGANIC CHEMISTRY COMMUNICATIONS, 2012, 卷号: 23, 期号: 9, 页码: 109-112
Authors:  Dong Xiaoyu;  Pan Shilie;  Li Feng;  Shi Yunjing;  Zhou Zhongxiang;  Zhao Wenwu;  Huang Zhenjun
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Crystal Structure  Synthesis  Babibo4  
CCD在不同注量率电子辐照下的辐射效应研究 期刊论文
原子能科学技术, 2012, 卷号: 46, 期号: 3, 页码: 346-350
Authors:  李豫东;  郭旗;  陆妩;  周东;  何承发;  余学峰
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线阵ccd  电子辐照  电离总剂量效应  时间相关效应  
静态随机存储器总剂量辐射及退火效应研究 期刊论文
原子能科学技术, 2012, 卷号: 46, 期号: 4, 页码: 507-512
Authors:  李明;  余学峰;  许发月;  李茂顺;  高博;  崔江维;  周东;  席善斌;  王飞
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静态随机存储器  总剂量效应  功耗电流  退火效应  
Synthesis, structure, and properties of a novel hydrated borate Rb-4[B4O5(OH)(4)](2)center dot 3H(2)O 期刊论文
SOLID STATE SCIENCES, 2011, 卷号: 13, 期号: 1, 页码: 82-87
Authors:  Zhao Yi;  Pan Shilie;  Li Feng;  Wang Yongjiang;  Fan Xiaoyun;  Dong Xiaoyu;  Jia Dianzeng;  Guo Jixi;  Zhou Zhongxiang
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Rb-4b4o5(Oh)(4)(2)Center Dot 3h(2)o  Borate  Crystal Structure  Crystal Growth  
PDSOI CMOS SRAM总剂量辐射及退火效应的研究 期刊论文
核技术, 2011, 卷号: 34, 期号: 6, 页码: 452-456
Authors:  李明;  余学峰;  卢健;  高博;  崔江维;  周东;  许发月;  席善斌;  王飞
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Pdsoi  Sram  总剂量效应  功耗电流  退火效应  
Nearly Monodisperse Ferroelectric BaTiO3 Hollow Nanoparticles: Size-Related Solid Evacuation in Ostwald-Ripening-lnduced Hollowing Process 期刊论文
CRYSTAL GROWTH & DESIGN, 2010, 卷号: 10, 期号: 9, 页码: 3990-3995
Authors:  Tian Xuelin;  Li Juan;  Chen Kai;  Han Jian;  Pan Shilie;  Wang Yongjiang;  Fan Xiaoyun;  Li Feng;  Zhou Zhongxiang;  Pan, SL
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