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Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文
CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4
Authors:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie);  Ma, LD (Ma, Lin-Dong);  Wang, TH (Wang, Tian-Hui);  Cai, YL (Cai, Yu-Long);  Wang, ZM (Wang, Zhi-Ming);  Guo, Q (Guo, Qi)
Adobe PDF(740Kb)  |  Favorite  |  View/Download:66/0  |  Submit date:2018/08/14
An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation 期刊论文
CHINESE PHYSICS LETTERS, 2017, 卷号: 34, 期号: 7, 页码: 181-184
Authors:  Ma, T (Ma, Teng);  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dan-Dan);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
Adobe PDF(686Kb)  |  Favorite  |  View/Download:31/0  |  Submit date:2017/12/14
Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors 期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 7, 页码: 1-3
Authors:  Zheng, QW (Zheng, Qi-Wen);  Cui, JW (Cui, Jiang-Wei);  Zhou, H (Zhou, Hang);  Yu, DZ (Yu, De-Zhao);  Yu, XF (Yu, Xue-Feng);  Guo, Q (Guo, Qi)
Adobe PDF(414Kb)  |  Favorite  |  View/Download:94/1  |  Submit date:2016/12/07
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 12
Authors:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Yu, XF (Yu Xue-Feng);  Guo, Q (Guo Qi);  Zhou, H (Zhou Hang);  Ren, DY (Ren Di-Yuan);  Yu, XF
Adobe PDF(605Kb)  |  Favorite  |  View/Download:21/0  |  Submit date:2017/09/21