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Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7
Authors:  Xi Shan-Bin;  Lu Wu;  Wang Zhi-Kuan;  Ren Di-Yuan;  Zhou Dong;  Wen Lin;  Sun Jing
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Subthreshold-current Technique  Gate Control  Lateral Pnp Bipolar Transistor  Charge Separation  
氧化层厚度对NPN双极管辐射损伤的影响 期刊论文
核技术, 2012, 卷号: 35, 期号: 2, 页码: 104-108
Authors:  席善斌;  陆妩;  王志宽;  任迪远;  周东;  文林;  孙静
Adobe PDF(670Kb)  |  Favorite  |  View/Download:236/16  |  Submit date:2012/11/29
Npn双极晶体管  60coγ辐照  氧化层厚度  剂量率效应  
中带电压法分离栅控横向pnp双极晶体管辐照感生缺陷 期刊论文
物理学报, 2012, 卷号: 61, 期号: 7, 页码: 350-355
Authors:  席善斌;  陆妩;  王志宽;  任迪远;  周东;  文林;  孙静
Adobe PDF(626Kb)  |  Favorite  |  View/Download:254/8  |  Submit date:2012/11/29
中带电压法  栅控  横向pnp双极晶体管  电荷分离  
栅控横向PNP双极晶体管电离辐射效应 期刊论文
核技术, 2012, 卷号: 35, 期号: 11, 页码: 827-832
Authors:  席善斌;  陆妩;  任迪远;  王志宽;  周东;  文林;  孙静
Adobe PDF(983Kb)  |  Favorite  |  View/Download:163/2  |  Submit date:2013/11/07
Pnp双极晶体管  60co-gamma辐照  辐照感生电荷  电荷分离  
国产VDMOS器件总剂量辐射损伤及退火效应研究 会议论文
, 北京, 2009-11-18
Authors:  高博;  余学峰;  任迪远;  刘刚;  王义元;  孙静;  文林;  李茂顺;  崔江维
Adobe PDF(668Kb)  |  Favorite  |  View/Download:164/2  |  Submit date:2013/04/09
Vdmos器件  总剂量  辐射效应  退火效应