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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
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Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Total ionizing dose effects of domestic SiGe HBTs under different dose rates 期刊论文
CHINESE PHYSICS C, 2016, 卷号: 40, 期号: 3, 页码: 1-5
Authors:  Liu, MH (Liu, Mo-Han);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Wang, X (Wang, Xin);  Guo, Q (Guo, Qi);  He, CF (He, Cheng-Fa);  Jiang, K (Jiang, Ke);  Li, XL (Li, Xiao-Long);  Xun, MZ (Xun, Ming-Zhu)
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Sige Hbts  Tid  Eldrs  Annealing  
Radiation Resistance of Fluorine-Implanted PNP Using Gated-Controlled Lateral PNP Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2016, 卷号: 33, 期号: 8, 页码: 1-3
Authors:  Wang, X (Wang, Xin);  Lu, W (Lu, Wu);  Ma, WY (Ma, Wu-Ying);  Guo, Q (Guo, Qi);  Wang, ZK (Wang, Zhi-Kuan);  He, CF (He, Cheng-Fa);  Liu, MH (Liu, Mo-Han);  Li, XL (Li, Xiao-Long);  Jia, JC (Jia, Jin-Cheng)
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电荷耦合器件的γ辐照剂量率效应研究 期刊论文
发光学报, 2016, 卷号: 37, 期号: 6, 页码: 711-719
Authors:  武大猷;  文林;  汪朝敏;  何承发;  郭旗;  李豫东;  曾俊哲;  汪波;  刘元
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电荷耦合器件  暗信号  低剂量率损伤增强效应  暗场像素统计  
质子与中子辐照对电荷耦合器件暗信号参数的影响及其效应分析 期刊论文
物理学报, 2015, 卷号: 64, 期号: 19, 页码: 173-180
Authors:  曾骏哲;  李豫东;  文林;  何承发;  郭旗;  汪波;  玛丽娅;  魏莹;  王海娇;  武大猷;  王帆;  周航
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电荷耦合器件  质子辐照  中子辐照  输运仿真  
电荷耦合器件在质子辐照下的粒子输运仿真与效应分析 期刊论文
物理学报, 2015, 卷号: 64, 期号: 11, 页码: 225-232
Authors:  曾骏哲;  何承发;  李豫东;  郭旗;  文林;  汪波;  玛丽娅;  王海娇
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电荷耦合器件  质子辐照  位移效应  输运仿真  
Effects of proton and neutron irradiation on dark signal of charge-coupled device 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 19
Authors:  Zeng, JZ (Zeng Jun-Zhe);  Li, YD (Li Yu-Dong);  Wen, L (Wen Lin);  He, CF (He Cheng-Fa);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Maria (Maria);  Wei, Y (Wei Yin);  Wang, HJ (Wang Hai-Jiao);  Wu, DY (Wu Da-You);  Wang, F (Wang Fan);  Zhou, H (Zhou Hang);  Wen, L
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Charge Coupled Devices  Proton Irradiation  Neutron Irradiation  Transport Simulation  
Optical properties of electron beam and gamma-ray irradiated InGaAs/GaAs quantum well and quantum dot structures 期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2013, 卷号: 83, 期号: 1, 页码: 42-47
Authors:  Aierken A.;  Guo Q.;  Huhtio T.;  Sopanen M.;  He Ch F.;  Li Y. D.;  Wen L.;  Ren D. Y.
Adobe PDF(811Kb)  |  Favorite  |  View/Download:201/0  |  Submit date:2013/11/07
Irradiation  Electron Beam  Gamma-ray  Quantum Structure  Photoluminescence