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Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 3, 页码: 1-9
Authors:  Li, XL (Li, Xiao-Long);  Lu, W (Lu, Wu);  Wang, X (Wang, Xin);  Yu, X (Yu, Xin);  Guo, Q (Guo, Qi);  Sun, J (Sun, Jing);  Liu, MH (Liu, Mo-Han);  Yao, S (Yao, Shuai);  Wei, XY (Wei, Xin-Yu);  He, CF (He, Cheng-Fa)
Adobe PDF(950Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/05/14
Ionizing Radiation Damage  Enhanced Low Dose Rate Sensitivity (Eldrs)  Switched Temperature Irradiation  Gate-controlled Lateral Pnp Transistor (glPnp)  
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
Authors:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ];  Feng, J (Feng, Juan)[ 1 ];  Wang, X (Wang, Xin)[ 2 ];  Wei, Y (Wei, Yin)[ 2 ];  Wu, XX (Wu, Xian-Xiang)[ 1 ]
Adobe PDF(1496Kb)  |  Favorite  |  View/Download:35/0  |  Submit date:2018/11/20
Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose  
Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-5
Authors:  Ma, LD (Ma, Lin-Dong)[ 1,2,3 ];  Li, YD (Li, Yu-Dong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ];  Zhang, X (Zhang, Xiang)[ 1,2,3 ];  Wang, TH (Wang, Tian-Hui)[ 1,2,3 ];  Cai, YL (Cai, Yu-Long)[ 1,2,3 ];  Wang, ZM (Wang, Zhi-Ming)[ 1,2,3 ];  Guo, Q (Guo, Qi)[ 1,2 ]
Adobe PDF(567Kb)  |  Favorite  |  View/Download:43/0  |  Submit date:2018/11/20
Cmos Active Pixel Sensor  Dark Current  Quantum Efficiency  
An investigation of ionizing radiation damage in different SiGe processes 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 8
Authors:  Li, P (Li, Pei);  Liu, MH (Liu, Mo-Han);  He, CH (He, Chao-Hui);  Guo, HX (Guo, Hong-Xia);  Zhang, JX (Zhang, Jin-Xin);  Ma, T (Ma, Ting)
Adobe PDF(2362Kb)  |  Favorite  |  View/Download:29/0  |  Submit date:2017/12/11
Different Silicon-germanium Process  Ionizing Radiation Damage  Numerical Simulation  
Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8, 页码: 1-6
Authors:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  Liu, YR (Liu Yu-Rong);  Wang, X (Wang Xin);  En, YF (En Yun-Fei);  Li, B (Li Bin);  Lu, YD (Lu Yu-Dong)
Adobe PDF(574Kb)  |  Favorite  |  View/Download:26/0  |  Submit date:2018/01/25
SilicOn On Insulator  Ion implantatIon  Ionizing Radiation  Low Frequency Noise