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电荷耦合器件的γ辐照剂量率效应研究 期刊论文
发光学报, 2016, 卷号: 37, 期号: 6, 页码: 711-719
Authors:  武大猷;  文林;  汪朝敏;  何承发;  郭旗;  李豫东;  曾俊哲;  汪波;  刘元
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电荷耦合器件  暗信号  低剂量率损伤增强效应  暗场像素统计  
Glass fibers with multi-functional capabilities for engineering and environmental applications 会议论文
, Penang, Malaysia, November 19, 2013 - November 21, 2013
Authors:  ChenLin;  HaoBin;  MaPeng-Cheng
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Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 1
Authors:  Wu, Xue;  Lu, Wu;  Wang, Yiyuan;  Xu, Jialing;  Zhang, Leqing;  Lu, Jian;  Yu, Xin;  Zhang, Xingyao;  Hu, Tianle;  Lu, W
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Structural evolution and electric properties of low content Zr-doped BiFeO3 thin films 会议论文
, Guangzhou, PEOPLES R CHINA, July 6, 2013 - July 7, 2013
Authors:  LiJin;  WangLei;  BianLiang;  ZhaoPeng Jun;  XuJin Bao
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Reactive sputtering deposition of Gd-doped AlN thin film 会议论文
, Taipei, TAIWAN, October 17, 2012 - October 18, 2012
Authors:  Wu, Rong;  Pan, Dong;  Jian, Jikang;  Li, Jin
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Ain  Doping  Gd  Rf Reactive Sputtering  
Synthesis of Mn-doped AlN nanobelts via chemical vapor deposition 会议论文
, Xian, PEOPLES R CHINA, August 29, 2012 - September 1, 2012
Authors:  WuRong;  JiangNan-Nan;  LiJin;  HouJuan;  Chang Ai-Min
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Aln  Nanobelt  Doping  Optical Property  Cvd  
Synthesis of Transition Metal (Cu, Fe and Co) Doped ZnS Nanostructures 会议论文
, Xian, PEOPLES R CHINA, August 29, 2012 - September 1, 2012
Authors:  WuRong;  LiJin;  HouJuan;  ChangAi-Min;  Wu, R.
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Zns  Solvothermal  Phase Transformation  Doping  Nanostructures  
Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 3
Authors:  Yuzhan, Zheng;  Wu, Lu;  Diyuan, Ren;  Yiyuan, Wang;  Zhikuan, Wang;  Yonghui, Yang;  Wu, L.
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NTC and electrical properties of nickel and gold doped n-type silicon material 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 8, 页码: 52-55
Authors:  Dong, Maojin;  Chen, Zhaoyang;  Fan, Yanwei;  Wang, Junhua;  Tao, Mingde;  Cong, Xiuyun
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Deep Level Impurities  Nickel  Gold  Ntc  Electrical Properties  
Leakage current mechanisms of ultrathin high-k Er2O3 gate dielectric film 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 10, 页码: 21-26
Authors:  Wu, Deqi;  Yao, Jincheng;  Zhao, Hongsheng;  Chang, Aimin;  Li, Feng
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Er_2o_3  High-kappa Gate Dielectrics  Leakage Current  Leakage Current Mechanisms