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不同注量率质子辐照对CCD参数退化的影响分析 期刊论文
现代应用物理, 2018, 卷号: 9, 期号: 2, 页码: 67-70
Authors:  李豫东;  文林;  郭旗;  何承发;  周东;  冯婕;  张兴尧;  于新
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质子  电荷耦合器件  辐射效应  注量率  缺陷  
Estimation of low-dose-rate degradation on bipolar linear circuits using different accelerated evaluation methods 期刊论文
ACTA PHYSICA SINICA, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  Li, XL (Li Xiao-Long)[ 1,2,3 ];  Lu, W (Lu Wu)[ 1,2 ];  Wang, X (Wang Xin)[ 1,2,3 ];  Guo, Q (Guo Qi)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1,2 ];  Sun, J (Sun Jing)[ 1,2 ];  Yu, X (Yu Xin)[ 1,2 ];  Liu, MH (Liu Mo-Han)[ 1,2,3 ];  Jia, JC (Jia Jin-Cheng)[ 1,2,3 ];  Yao, S (Yao Shuai)[ 1,2,3 ];  Wei, XY (Wei Xin-Yu)[ 1,2,3 ]
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Bipolar Circuit  Enhanced Low-dose-rate Sensitivity  Accelerated Evaluation Method  
典型模拟电路低剂量率辐照损伤增强效应的研究与评估 期刊论文
物理学报, 2018, 卷号: 67, 期号: 9, 页码: 202-209
Authors:  李小龙;  陆妩;  王信;  郭旗;  何承发;  孙静;  于新;  刘默寒;  贾金成;  姚帅;  魏昕宇
Adobe PDF(618Kb)  |  Favorite  |  View/Download:63/1  |  Submit date:2018/09/12
双极模拟电路  低剂量率辐照损伤增强效应  加速评估方法  
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
Authors:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang);  Su, DD (Su, Dandan);  Guo, Q (Guo, Qi)
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Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)  
沟道宽度对65nm金属氧化物半导体器件负偏压温度不稳定性的影响研究 期刊论文
电子学报, 2018, 卷号: 46, 期号: 5, 页码: 1128-1132
Authors:  崔江维;  郑齐文;  余德昭;  周航;  苏丹丹;  马腾;  魏莹;  余学峰;  郭旗
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65nm  负偏压温度不稳定性  沟道宽度  
总剂量辐射对65 nm NMOSFET热载流子敏感参数的影响 期刊论文
微电子学, 2018, 卷号: 48, 期号: 1, 页码: 126-130
Authors:  苏丹丹;  周航;  郑齐文;  崔江维;  孙静;  马腾;  魏莹;  余学峰;  郭旗
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65 Nm Nmosfet  总剂量效应  热载流子效应  
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
Authors:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ];  Yu, XF (Yu, Xuefeng)[ 1 ];  Wei, Y (Wei, Ying)[ 1 ];  Wang, L (Wang, Liang)[ 3 ];  Liu, JQ (Liu, Jiaqi)[ 3 ];  He, CF (He, Chengfa)[ 1 ];  Guo, Q (Guo, Qi)
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Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)  
Characteristics of p-i-n diodes basing on displacement damage detector 期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2017, 卷号: 139, 期号: 10, 页码: 11-16
Authors:  Sun, J (Sun Jing)[ 1,2 ];  Guo, Q (Guo Qi)[ 1 ];  Yu, X (Yu Xin)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1 ];  Shi, WL (Shi Wei-Lei)[ 1 ];  Zhang, XY (Zhang Xing-Yao)[ 1 ]
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Displacement damage  NIEL  P-i-n photodiode  Damage enhancement factor  
Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
Authors:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰);  Guo Q(郭旗)
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Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 7, 页码: 074008-1-074008-6
Authors:  Zheng, Qiwen;  Yu, Xuefeng;  Cui, Jiangwei;  Guo, Qi;  Cong, Zhongchao;  Zhang, Xingyao;  Deng, Wei;  Zhang, Xiaofu;  Wu, Zhengxin
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Silicon-on-insulator  Hot-carrier Effect  Hump  Back Gate